N
Nicolas Wyrsch
Researcher at École Polytechnique Fédérale de Lausanne
Publications - 152
Citations - 4899
Nicolas Wyrsch is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Amorphous silicon & Silicon. The author has an hindex of 27, co-authored 140 publications receiving 4503 citations. Previous affiliations of Nicolas Wyrsch include University of Neuchâtel.
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Photovoltaic Technology: The Case for Thin-Film Solar Cells
TL;DR: The advantages and limitations of photovoltaic solar modules for energy generation are reviewed with their operation principles and physical efficiency limits, and recent developments suggest that thin-film crystalline silicon (especially microcrystalline silicon) is becoming a prime candidate for future photov electricity generation.
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Thin‐film silicon solar cell technology
Arvind Shah,Horst Schade,Milan Vanecek,Johannes Meier,Evelyne Vallat-Sauvain,Nicolas Wyrsch,Ulrich Kroll,C. Droz,Julien Bailat +8 more
TL;DR: In this article, the authors describe the use of hydrogenated amorphous silicon (a-Si:H) and hydrogenated micro-crystalline silicon (μc-Si-H) thin films (layers), both deposited at low temperatures (200°C) by plasma-assisted chemical vapour deposition (PECVD), from a mixture of silane and hydrogen.
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Material and solar cell research in microcrystalline silicon
Arvind Shah,Johannes Meier,Evelyne Vallat-Sauvain,Nicolas Wyrsch,Ulrich Kroll,C. Droz,U. Graf +6 more
TL;DR: In this paper, the authors describe the introduction of hydrogenated microcrystalline silicon (μc-Si:H) as novel absorber material for thin-film silicon solar cells.
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Influence of plasma excitation frequency for a -Si:H thin film deposition
TL;DR: In this article, the effect of plasma excitation frequency on the deposition rate and on the optical and electrical properties of amorphous silicon film was studied over the range 25-150 MHz.
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High-rate deposition of amorphous hydrogenated silicon: effect of plasma excitation frequency
TL;DR: In this article, the effect of plasma excitation frequency on the deposition of amorphous hydrogenated silicon in a silane glow-discharge system is investigated, and a large increase in the deposition rate up to 21 A/s is observed in the range between 25 and 150 MHz.