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Material and solar cell research in microcrystalline silicon

TLDR
In this paper, the authors describe the introduction of hydrogenated microcrystalline silicon (μc-Si:H) as novel absorber material for thin-film silicon solar cells.
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This article is published in Solar Energy Materials and Solar Cells.The article was published on 2003-07-01 and is currently open access. It has received 425 citations till now. The article focuses on the topics: Micromorph & Monocrystalline silicon.

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Chemical approaches to artificial photosynthesis. 2.

TL;DR: The underlying physical principles--light absorption, energy transfer, radiative and nonradiative excited-state decay, electron transfer, proton-coupled electronTransfer, and catalysis--are outlined with an eye toward their roles in molecular assemblies for energy conversion.
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Innovative dual function nc-SiOx:H layer leading to a >16% efficient multi-junction thin-film silicon solar cell

TL;DR: In this article, a dual-function nano-structured hydrogenated silicon oxide (nc-SiOx:H) layer was proposed for multi-junction solar cells, which achieved a significant gain in the middle cell current density of ∼1.0 mA/cm2.
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Broadband light management using low-Q whispering gallery modes in spherical nanoshells

TL;DR: This work demonstrates a new approach to light management by forming whispering-gallery resonant modes inside a spherical nanoshell structure that could enable the manufacturing of high-throughput ultra-thin film absorbers in a variety of material systems that demand shorter deposition time, less material usage and transferability to flexible substrates.
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Structural defects caused by a rough substrate and their influence on the performance of hydrogenated nano-crystalline silicon n-i-p solar cells

TL;DR: In this paper, a cross-sectional transmission electron microscopy study of a set of hydrogenated nano-crystalline silicon n-i-p solar cells deposited by hot-wire chemical vapour deposition on Corning glass substrates coated with ZnO-covered Ag layers with various surface roughnesses was performed.
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Journal ArticleDOI

Complete microcrystalline p-i-n solar cell—Crystalline or amorphous cell behavior?

TL;DR: Voltage‐dependent spectral response measurements suggest that the carrier transport in complete μc‐Si:H p‐i‐n cells may possibly be cosupported by diffusion (in addition to drift), and first light‐soaking experiments indicate no degradation for the entirely μc •Si •H cells.
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Hydrogen in amorphous and microcrystalline silicon films prepared by hydrogen dilution

TL;DR: In this paper, a large range of silane dilution investigated can be divided into an amorphous and a micro-crystalline zone, separated by a narrow transition zone at a dilution level of 7.5%.
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Microcrystalline silicon and micromorph tandem solar cells

TL;DR: In this article, the authors show that the complexity and the variety of microcrystalline silicon can be considered to be much more complex and very different from an ideal isotropic semiconductor and point out that the deposition parameter space is very large and mainly unexploited.
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The preparation of thin layers of Ge and Si by chemical hydrogen plasma transport

TL;DR: In this article, it has been proved that the transport of Ge and Si in hydrogen plasma takes place under certain conditions and the transport is probably carried on by volatile hydrides, which are formed during the interaction of hydrogen plasma and the respective semiconductor.
Journal ArticleDOI

Optical absorption and light scattering in microcrystalline silicon thin films and solar cells

TL;DR: In this article, a detailed theory for evaluation of the optical absorption coefficient α from transmittance, reflectance and absorptance measurements in a broad spectral region is presented for the case of surface and bulk light scattering.
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Frequently Asked Questions (13)
Q1. What contributions have the authors mentioned in the paper "Material and solar cell research in microcrystalline silicon" ?

Shah et al. this paper described the introduction of hydrogenated microcrystalline silicon ( mc-Si: H ) as novel absorber material for thin-film silicon solar cells. 

An ‘‘intermediate mirror layer’’ between the amorphous top cell and the microcrystalline bottom cell is an interesting scheme that has been tried in this context [56,59,60]. 

Because deposition rate rd is one of the main existing bottlenecks when one wants to reduce the production cost of mc-Si:H solar cells and modules, the increase of rd with higher fexc is a significant advantage for an industrial plant. 

If the tandem is top-cell limited, it suffers quite substantially from light-induced degradation, but it will have a favorably low temperature coefficient. 

In order to keep the deposition/fabrication time of the microcrystalline bottom cell within reasonable limits, one has to keep its thickness also low (below 1.5 mm). 

To increase the current of micromorph tandems the most promising method is, as of now, to enhance light trapping within the solar cell: 

The detrimental effect of oxygen on collection in the intrinsic (i)-layer of a mc-Si:H pin-type solar cell certainly depends on the way oxygen is incorporated into the silicon crystallites. 

In these first experiments, the deposition rates were very low, with values well below 1 (A/s. Such mc-Si:H layers had, in the early days, a strong n-type character; they could also be easily doped, e.g. with phosphine, so as to push the Fermi level upwards towards the conduction band edge and to obtain layers with an even more pronounced n-type character, or with diborane, so as to push the Fermi level downwards towards the valence band edge and to obtain p-type layers. 

Its basic stability w.r.t. light-induced degradation makes it especially attractive for photovoltaic and optoelectronic applications. 

It appears that mc-Si:H solar cells with high Voc values show a less pronounced drop in efficiency as the temperature increases, than wafer-based crystalline silicon (c-Si) solar cells (Fig. 15, [48]). 

The diffusion length Ldiff of minority carriers in growth direction can be measured for mc-Si:H layers by the SPV (surface photovoltage) technique. 

On the other hand, mc-Si:H layers do suffer from another potential source of instability, i.e. from an increasing contamination by oxygen, when exposed to air over a period of weeks or longer. 

Because certain types of mc-Si:H layers exhibit cracks, shunts can constitute here a more pronounced problem than in other thin-film solar cells.