Q2. What is the promising scheme to enhance light trapping in a microcrystalline cell?
An ‘‘intermediate mirror layer’’ between the amorphous top cell and the microcrystalline bottom cell is an interesting scheme that has been tried in this context [56,59,60].
Q3. What is the advantage of a higher fexc?
Because deposition rate rd is one of the main existing bottlenecks when one wants to reduce the production cost of mc-Si:H solar cells and modules, the increase of rd with higher fexc is a significant advantage for an industrial plant.
Q4. What is the way to improve the performance of a micromorph tandem?
If the tandem is top-cell limited, it suffers quite substantially from light-induced degradation, but it will have a favorably low temperature coefficient.
Q5. How does one keep the thickness of the microcrystalline bottom cell?
In order to keep the deposition/fabrication time of the microcrystalline bottom cell within reasonable limits, one has to keep its thickness also low (below 1.5 mm).
Q6. What is the promising method to increase the current of micromorph tandems?
To increase the current of micromorph tandems the most promising method is, as of now, to enhance light trapping within the solar cell:
Q7. What is the effect of oxygen on the collection of a mc-Si:?
The detrimental effect of oxygen on collection in the intrinsic (i)-layer of a mc-Si:H pin-type solar cell certainly depends on the way oxygen is incorporated into the silicon crystallites.
Q8. What was the first experimental method used for mc-Si:H?
In these first experiments, the deposition rates were very low, with values well below 1 (A/s. Such mc-Si:H layers had, in the early days, a strong n-type character; they could also be easily doped, e.g. with phosphine, so as to push the Fermi level upwards towards the conduction band edge and to obtain layers with an even more pronounced n-type character, or with diborane, so as to push the Fermi level downwards towards the valence band edge and to obtain p-type layers.
Q9. What is the main reason why micromorph silicon is so attractive?
Its basic stability w.r.t. light-induced degradation makes it especially attractive for photovoltaic and optoelectronic applications.
Q10. What is the effect of mc-Si:H solar cells on the efficiency?
It appears that mc-Si:H solar cells with high Voc values show a less pronounced drop in efficiency as the temperature increases, than wafer-based crystalline silicon (c-Si) solar cells (Fig. 15, [48]).
Q11. What is the mc-Si:H layer's diffusion length?
The diffusion length Ldiff of minority carriers in growth direction can be measured for mc-Si:H layers by the SPV (surface photovoltage) technique.
Q12. What is the effect of light on mc-Si:H?
On the other hand, mc-Si:H layers do suffer from another potential source of instability, i.e. from an increasing contamination by oxygen, when exposed to air over a period of weeks or longer.
Q13. Why do shunts occur in mc-Si:H cells?
Because certain types of mc-Si:H layers exhibit cracks, shunts can constitute here a more pronounced problem than in other thin-film solar cells.