N
Nils Weimann
Researcher at University of Duisburg-Essen
Publications - 160
Citations - 7764
Nils Weimann is an academic researcher from University of Duisburg-Essen. The author has contributed to research in topics: Heterojunction bipolar transistor & Bipolar junction transistor. The author has an hindex of 27, co-authored 160 publications receiving 7215 citations. Previous affiliations of Nils Weimann include Alcatel-Lucent & Agere Systems.
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Proceedings ArticleDOI
Towards planar processing for InP DHBTs
TL;DR: In this article, the authors demonstrate that by developing ion-implantation technologies, planar planar InP DHBTs can be built successfully, and they demonstrate that such a planar DHBT can be used for large-scale device integration.
Proceedings ArticleDOI
InP HBT technology for THz applications
TL;DR: The InP heterojunction bipolar transistor (InP HBT) has high potential for further development in the THz frequency range through scaling and process development as discussed by the authors, and the concept of vertical integration is of particularly high interest for THz phased arrays.
Journal ArticleDOI
A Modular MIMO Millimeter-Wave Imaging Radar System for Space Applications and Its Components
Michael Hrobak,Karsten Thurn,Jochen Moll,Maruf Hossain,Amit Shrestha,Thualfiqar Al-Sawaf,Dimitri Stoppel,Nils Weimann,Adam Ramer,Wolfgang Heinrich,Javier Martinez,Martin Vossiek,Tom K. Johansen,Viktor Krozer,Marion Resch,Jurgen Bosse,Michael Sterns,Kai Loebbicke,Stefan Zorn,Mohamed Hussein Eissa,Marco Lisker,Frank Herzel,Robert Miesen,Klaus Vollmann +23 more
TL;DR: The design and prototyping of components for a modular multiple-input-multiple-output (MIMO) millimeter-wave radar for space applications, which is required to support orbital maneuvers like satellite rendezvous and docking for non-cooperative satellites is presented.
Proceedings ArticleDOI
AlGaN/GaN HEMTs grown by MBE on semi-insulating HVPE GaN templates
Nils Weimann,Michael J. Manfra,Julia W. P. Hsu,Loren Pfeiffer,Ken W. West,D. V. Lang,R. J. Molnar +6 more
TL;DR: In this article, the authors propose to circumvent the low thermal conductivity of sapphire substrates by including in a device structure a thick (15 /spl mu/m) GaN buffer grown by HVPE between the sappire substrate and the MBE device layer stack.
Journal ArticleDOI
There is Plenty of Room for THz Tunneling Electron Devices Beyond the Transit Time Limit
TL;DR: In this paper, the displacement current component of the total current, which at frequencies larger than the inverse of the electron transit time can be more relevant than the particle component, is captured in a simple way.