N
Nils Weimann
Researcher at University of Duisburg-Essen
Publications - 160
Citations - 7764
Nils Weimann is an academic researcher from University of Duisburg-Essen. The author has contributed to research in topics: Heterojunction bipolar transistor & Bipolar junction transistor. The author has an hindex of 27, co-authored 160 publications receiving 7215 citations. Previous affiliations of Nils Weimann include Alcatel-Lucent & Agere Systems.
Papers
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Proceedings ArticleDOI
A 1 W linear high-power InP balanced uni-traveling carrier photodetector
Vincent Houtsma,Ting-Chen Hu,Nils Weimann,Rose Kopf,A. Tate,J. Frackoviak,R. Reyes,Young-Kai Chen,Liming Zhang +8 more
TL;DR: In this paper, a high-power balanced photo-detector with over 1 W of RF output power at 2 GHz and OIP3 of 48 dBm at room temperature was demonstrated.
Proceedings ArticleDOI
Millimeter-wave Signal Generation and Detection via the same Triple Barrier RTD and on-chip Antenna
Khaled Arzi,Andreas Rennings,Daniel Erni,Nils Weimann,Werner Prost,Safumi Suzuki,Masahiro Asada +6 more
TL;DR: In this article, a monolithic integration of high current density Triple Barrier Resonant Tunneling Diode into a slot antenna for mm-wave signal generation and detection at mm-Wave frequencies via a single chip size component is demonstrated.
Journal ArticleDOI
Manufacturable Low-Cost Flip-Chip Mounting Technology for 300–500-GHz Assemblies
Nils Weimann,Sirinpa Monayakul,S. Sinha,F.J. Schmuckle,Michael Hrobak,D. Stoppel,Wilfred John,Olaf Krüger,Ralf Doerner,B. Janke,Viktor Krozer,Wolfgang Heinrich +11 more
TL;DR: In this paper, the authors developed a chip mounting technology suitable for low-cost assemblies in the 300-500 GHz frequency range, compatible with standard chip and sub-mount fabrication techniques.
Proceedings ArticleDOI
InP Single-Ended Transimpedance Amplifier with 92-GHz Transimpedance Bandwidth
TL;DR: In this paper, a single-ended InP transimpedance amplifier (TIA) for next generation high-bandwidth optical fiber communication systems is presented, which exhibits 48 dB-Omega transimpingance and has a 3-dB bandwidth of 92 GHz.
Journal ArticleDOI
Small- and large-signal modeling of InP HBTs in transferred-substrate technology
Tom K. Johansen,Matthias Rudolph,Thomas Jensen,T. Kraemer,Nils Weimann,Frank Schnieder,Viktor Krozer,W. Heinrich +7 more
TL;DR: In this paper, the small and large-signal modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated.