We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

Carrier concentration profiles of two-dimensional electron gases are investigated in wurtzite, Ga-face AlxGa1−xN/GaN/AlxGa1−xN and N-face GaN/AlxGa1−xN/GaN heterostructures used for the fabrication of field effect transistors. Analysis of the measured electron distributions in heterostructures with AlGaN barrier layers of different Al concentrations (0.15<x<0.5) and thickness between 20 and 65 nm demonstrate the important role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces. Characterization of the electrical properties of nominally undoped transistor structures reveals the presence of high sheet carrier concentrations, increasing from 6×1012 to 2×1013 cm−2 in the GaN channel with increasing Al-concentration from x=0.15 to 0.31. The observed high sheet carrier concentrations and strong confinement at specific interfaces of the N- and Ga-face pseudomorphic grown heterostructures can be explained as a consequence of interface charges induced by ...

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Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

Wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to microwave transmitters for communications and radar. Of the various materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising. This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems.

AlGaN/GaN HEMTs-an overview of device operation and applications

Materials research plays a vital role in transforming breakthrough scientific ideas into next-generation technology. Similar to the way silicon revolutionized the microelectronics industry, the proper materials can greatly impact the field of plasmonics and metamaterials. Currently, research in plasmonics and metamaterials lacks good material building blocks in order to realize useful devices. Such devices suffer from many drawbacks arising from the undesirable properties of their material building blocks, especially metals. There are many materials, other than conventional metallic components such as gold and silver, that exhibit metallic properties and provide advantages in device performance, design flexibility, fabrication, integration, and tunability. This review explores different material classes for plasmonic and metamaterial applications, such as conventional semiconductors, transparent conducting oxides, perovskite oxides, metal nitrides, silicides, germanides, and 2D materials such as graphene. This review provides a summary of the recent developments in the search for better plasmonic materials and an outlook of further research directions.

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Alternative Plasmonic Materials: Beyond Gold and Silver

The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation, and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes, and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

Gan : processing, defects, and devices

This paper presents a W -band hetero-integrated transmitter module using InP-on-BiCMOS technology. It consists of a Phase Locked Loop (PLL) in 0.25 μm BiCMOS technology and a frequency multiplier followed by a double-balanced Gilbert mixer cell in 0.8 μm InP-HBT technology, which is integrated on top of the BiCMOS MMIC in a wafer-level BCB bonding process. The PLL operates from 45 GHz to 47 GHz and the module achieves a measured single sideband (SSB) power conversion loss of 20 dB and 22 dB at 88 GHz and 95 GHz, respectively, limited by the output power from the PLL source. The entire circuit consumes 434 mW DC power. The chip area of the module is 2.5×1.3 mm2, To the knowledge of the authors, this is the first complex hetero-Integrated module reported so far.

A Hetero-Integrated W-Band Transmitter Module in InP-on-BiCMOS Technology

This paper presents for the first time a high-efficiency W-band power amplifier (PA), the design of which follows the digital PA (DPA) design concept. The PA is realized as MMIC in a 0.8 μm InP DHBT transferred-substrate (TS) process. It utilizes a double-emitter-finger DHBT unit cell with an emitter area of 2 × 0.8 × 6 μm2. In contrast to the usual W-band PAs the single-stage DPA MMIC does not apply any special reactive matching for the transistor, which leads to a very compact chip size of 0.27 mm2. It includes a band-pass filter (BPF) at the output with 0.6 dB insertion loss and 24 dB input return loss at the signal frequency of 95 GHz. Applying an overdriven sinusoidal input signal the DPA achieves a maximum output power of 14.4 dBm and a power-added efficiency (PAE) of 31%. Collector efficiencies of more than 80% demonstrate the great potential of the digital PA concept for future high-speed communications.

An efficient W-band InP DHBT digital power amplifier

Polarity-controlled AlN/Si templates by in situ oxide desorption for variably arrayed MOVPE-GaN nanowires

A G-band broadband frequency doubler based on InP transferred-substrate (TS) InP-DHBT technology is presented. The MMIC utilizes a two 2-finger HBTs with a total emitter size of 4 × 0.8 × 5 μm2. Total chip size is 0.9 × 0.78 mm2. The doubler delivers a maximum output power of 10 dBm at 160 GHz. At the same frequency, the circuit exhibits a conversion gain up to 4 dB and a maximum output efficiency of 14 % for a total DC consumption of 72 mW. Output power stays above 7 dBm from 140 to 180 GHz, which yields a 3-dB bandwidth of 40 GHz. The positive gain values demonstrate the inherent advantage of active multipliers against their passive counterparts.

G-band frequency doubler based on InP transferred-substrate technology

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201900358

Nils Weimann

Papers

A Hetero-Integrated W-Band Transmitter Module in InP-on-BiCMOS Technology

An efficient W-band InP DHBT digital power amplifier

Polarity-controlled AlN/Si templates by in situ oxide desorption for variably arrayed MOVPE-GaN nanowires

G-band frequency doubler based on InP transferred-substrate technology

n‐Doped InGaP Nanowire Shells in GaAs/InGaP Core–Shell p–n Junctions