P
Patrick S. Goley
Researcher at Georgia Institute of Technology
Publications - 27
Citations - 361
Patrick S. Goley is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Molecular beam epitaxy & Heterojunction. The author has an hindex of 8, co-authored 26 publications receiving 273 citations. Previous affiliations of Patrick S. Goley include Virginia Tech.
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Journal ArticleDOI
Germanium Based Field-Effect Transistors: Challenges and Opportunities
Patrick S. Goley,Mantu K. Hudait +1 more
TL;DR: This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack.
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Strain-Engineered Biaxial Tensile Epitaxial Germanium for High-Performance Ge/InGaAs Tunnel Field-Effect Transistors
TL;DR: The structural, morphological, and energy band alignment properties of biaxial tensile-strained germanium epilayers, grown in-situ on GaAs via a linearly graded InxGa1−xAs buffer architecture and utilizing dual chamber molecular beam epitaxy, were investigated in this article.
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Heterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors
TL;DR: The heterogeneous integration of device-quality epitaxial Ge on Si using composite AlAs/GaAs large bandgap buffer, grown by molecular beam epitaxy that is suitable for fabricating low-power fin field-effect transistors required for continuing transistor miniaturization is reported on.
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Integration of SrTiO3 on Crystallographically Oriented Epitaxial Germanium for Low-Power Device Applications
Mantu K. Hudait,Michael Clavel,Yan Zhu,Patrick S. Goley,Souvik Kundu,Deepam Maurya,Shashank Priya +6 more
TL;DR: STO, when used as an interlayer between metal and n-type (4 × 10(18) cm(-3)) epitaxial Ge in metal-insulator-semiconductor (MIS) structures, showed a 1000 times increase in current density as well as a decrease in specific contact resistance.
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Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices
Michael Clavel,Dzianis Saladukha,Patrick S. Goley,Tomasz J. Ochalski,Tomasz J. Ochalski,Felipe Murphy-Armando,Robert J. Bodnar,Mantu K. Hudait +7 more
TL;DR: The successful heterogeneous integration of tunable tensile-strained germanium epilayers heterogeneously integrated on silicon (Si) paves the way for the design and implementation of novel Ge-based photonic devices on the Si technology platform.