P
Peter Hacke
Researcher at National Renewable Energy Laboratory
Publications - 177
Citations - 5314
Peter Hacke is an academic researcher from National Renewable Energy Laboratory. The author has contributed to research in topics: Potential induced degradation & Photovoltaic system. The author has an hindex of 29, co-authored 159 publications receiving 4561 citations. Previous affiliations of Peter Hacke include University of Chittagong & Applied Materials.
Papers
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Review of Failures of Photovoltaic Modules
Marc Köntges,Sarah Kurtz,Corinne E. Packard,Ulrike Jahn,K.A. Berger,K Kato,Thomas Friesen,H Liu,M Van Iseghem,John H. Wohlgemuth,David C. Miller,Michael D. Kempe,Peter Hacke,F. Reil,N. Bogdanski,Werner Herrmann,Claudia Buerhop-Lutz,G. Razongles,Gabi Friesen +18 more
TL;DR: The international Task 13 expert team has summarized the literature as well as their knowledge and personal experiences on actual failures of PV modules, and introduces a signal transition method for the detection of defective circuits in installed PV modules.
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A wafer-based monocrystalline silicon photovoltaics road map: Utilizing known technology improvement opportunities for further reductions in manufacturing costs
Alan Goodrich,Peter Hacke,Qi Wang,Bhushan Sopori,Robert Margolis,Ted James,Michael Woodhouse +6 more
TL;DR: In this paper, a detailed analysis of manufacturing costs for each step within the wafer-based monocrystalline silicon (c-Si) PV module supply chain is presented.
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Potential-induced degradation in photovoltaic modules: a critical review
Wei Luo,Yong Sheng Khoo,Peter Hacke,Volker Naumann,Dominik Lausch,Steven P. Harvey,Jai Prakash Singh,Jing Chai,Yan Wang,Armin G. Aberle,Seeram Ramakrishna +10 more
TL;DR: In this paper, a critical review of the available literature is given to serve as a one-stop source for understanding the current status of potential-induced degradation (PID) research.
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Schottky barrier on n‐type GaN grown by hydride vapor phase epitaxy
TL;DR: In this article, a Schottky barrier on unintentionally doped n-type GaN grown by hydride vapor phase epitaxy was obtained and characterized using vacuum evaporated gold as the barrier contact and aluminum for the ohmic contact.
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Analysis of deep levels in n‐type GaN by transient capacitance methods
Peter Hacke,Theeradetch Detchprohm,Kazumasa Hiramatsu,Nobuhiko Sawaki,Kazuyuki Tadatomo,K. Miyake +5 more
TL;DR: In this paper, the authors used transient capacitance methods to analyze traps occurring in unintentionally doped n-type GaN grown by hydride vapor phase epitaxy, and found that the capture process is nonexponential, perhaps due to the high trap concentration.