P
Pragya Kushwaha
Researcher at University of California, Berkeley
Publications - 63
Citations - 948
Pragya Kushwaha is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: BSIM & MOSFET. The author has an hindex of 14, co-authored 58 publications receiving 578 citations. Previous affiliations of Pragya Kushwaha include Indian Space Research Organisation & Indian Institute of Technology Kanpur.
Papers
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Journal ArticleDOI
Engineering Negative Differential Resistance in NCFETs for Analog Applications
Harshit Agarwal,Pragya Kushwaha,Juan Pablo Duarte,Yen-Kai Lin,Angada B. Sachid,Ming-Yen Kao,Huan-Lin Chang,Sayeef Salahuddin,Chenming Hu +8 more
TL;DR: It is demonstrated that the NDR effect for NCFET in the static limit can be engineered to reduce degradation in short-channel devices without compromising the subthreshold gain, which is crucial for analog applications.
Proceedings ArticleDOI
BSIM-CMG: Standard FinFET compact model for advanced circuit design
Juan Pablo Duarte,Sourabh Khandelwal,Aditya Sankar Medury,Chenming Hu,Pragya Kushwaha,Harshit Agarwal,Avirup Dasgupta,Yogesh Singh Chauhan +7 more
TL;DR: The core model is updated with a new unified FinFET model, which calculates charges and currents of transistors with complex fin cross-sections and threshold voltage modulation from bulk-bias effects and bias dependent quantum mechanical confinement effects are incorporated into the new core model.
Journal ArticleDOI
Proposal for Capacitance Matching in Negative Capacitance Field-Effect Transistors
Harshit Agarwal,Pragya Kushwaha,Yen-Kai Lin,Ming-Yen Kao,Yu-Hung Liao,Avirup Dasgupta,Sayeef Salahuddin,Chenming Hu +7 more
TL;DR: A new approach using multi-layer FE to engineer the shape of negative-capacitance field-effect transistor is discussed, and the results show that it leads to better sub-threshold swing as well as lower power supply.
Journal ArticleDOI
Modeling of GaN-Based Normally-Off FinFET
Chandan Yadav,Pragya Kushwaha,Sourabh Khandelwal,Juan Pablo Duarte,Yogesh Singh Chauhan,Chenming Hu +5 more
TL;DR: In this paper, a macromodel for normally off (enhancement mode) AlGaN/GaN-based FinFET (2-DEG channel at top with two MOS like sidewall channels) is proposed.
Journal ArticleDOI
BSIM Compact Model of Quantum Confinement in Advanced Nanosheet FETs
Avirup Dasgupta,Shivendra Singh Parihar,Pragya Kushwaha,Harshit Agarwal,Ming-Yen Kao,Sayeef Salahuddin,Yogesh Singh Chauhan,Chenming Hu +7 more
TL;DR: In this paper, the authors proposed a compact model for nanosheet FETs that takes the effects of quantum confinement into account, and implemented it using Verilog-A in the BSIM-CMG framework for all simulations.