Qin Wang

TL;DR: This paper investigates the resistive switching characteristics in a Cu/HfO(2):Cu/Pt sandwiched structure for multilevel non-volatile memory applications and finds different resistance values are achieved using different compliance currents in the program process.

TL;DR: In this article, the self-rectifying resistive switching characteristics are obtained when the resistive memory is switched to low-resistance state (LRS), and it is found that the Schottky contact at the Au/ZrO2 interface limits charge injection under reverse bias, while under forward bias the current is limited by space charge.

TL;DR: In this paper, the resistive switching characteristics of MnOx thin film were investigated for resistive random access memory (ReRAM) applications, and the experiment result suggested that Pt/MnOx/Al device had a potentiality for practical memory application.

TL;DR: In this article, a high-κ based charge trap flash (CTF) memory structure using bandgap engineered trapping layer HfO2/Al2O3/HfO 2 (HAH) has been demonstrated for multilevel cell applications.

TL;DR: In this paper, the resistive random access memory (RRAM) with metal-insulator-metal structure was investigated for the first time under radiation conditions, and the fabricated Cu-doped HfO2-based RRAM devices were found to have immunity from 60Co γ ray of various dose ranges.