R
Rangarajan Muralidharan
Researcher at Solid State Physics Laboratory
Publications - 82
Citations - 1008
Rangarajan Muralidharan is an academic researcher from Solid State Physics Laboratory. The author has contributed to research in topics: High-electron-mobility transistor & Molecular beam epitaxy. The author has an hindex of 13, co-authored 82 publications receiving 801 citations.
Papers
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High responsivity in molecular beam epitaxy grown beta-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector
Anamika Singh Pratiyush,Sriram Krishnamoorthy,Swanand V. Solanke,Zhanbo Xia,Rangarajan Muralidharan,Siddharth Rajan,Digbijoy N. Nath +6 more
TL;DR: In this paper, the authors demonstrate high spectral responsivity (SR) in MBE-grown epitaxial beta-Ga2O3-based solar blind photodetectors.
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High Responsivity in Molecular Beam Epitaxy (MBE) grown \b{eta}-Ga2O3 Metal Semiconductor Metal (MSM) Solar Blind Deep-UV Photodetector
Anamika Singh Pratiyush,Sriram Krishnamoorthy,Swanand V. Solanke,Zhanbo Xia,Rangarajan Muralidharan,Siddharth Rajan,Digbijoy N. Nath +6 more
TL;DR: In this paper, the authors demonstrate high spectral responsivity (SR) in MBE grown epitaxial Ga2O3-based solar blind MSM photodetectors (PD).
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Effect of annealing on β-Ga2O3 film grown by pulsed laser deposition technique
TL;DR: In this article, β-Ga 2 O 3 films were grown on sapphire substrate by pulsed laser deposition (PLD) technique and the crystalline structure and optical band gap were studied as a function of growth temperature, laser beam energy, annealing temperature and time.
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Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors
Shashwat Rathkanthiwar,Anisha Kalra,Swanand V. Solanke,Neha Mohta,Rangarajan Muralidharan,Srinivasan Raghavan,Digbijoy N. Nath +6 more
TL;DR: In this paper, the authors reported the highest responsivity for III-nitride metal Semiconductor metal solar-blind photodetectors on sapphire, with a visible rejection exceeding three orders of magnitude for front illumination.
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Virtual Ground Technique for Crosstalk Suppression in Networked Resistive Sensors
TL;DR: In this article, the authors presented a method of overcoming the problem of crosstalk by putting all of the row nodes at virtually equal potential using virtual ground of high-gain operational amplifiers (opamps) in negative feedback.