Journal ArticleDOI
Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors
Shashwat Rathkanthiwar,Anisha Kalra,Swanand V. Solanke,Neha Mohta,Rangarajan Muralidharan,Srinivasan Raghavan,Digbijoy N. Nath +6 more
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TLDR
In this paper, the authors reported the highest responsivity for III-nitride metal Semiconductor metal solar-blind photodetectors on sapphire, with a visible rejection exceeding three orders of magnitude for front illumination.Abstract:
We report on the highest responsivity for III-nitride Metal Semiconductor Metal solar-blind photodetectors on sapphire. Devices on unintentionally doped AlGaN epilayers grown by Metal Organic Chemical Vapor Deposition exhibited sharp absorption cut-off in the range of 245–290 nm. Very high responsivity >5 A/W at 10 V bias was achieved with visible rejection exceeding three orders of magnitude for front illumination. Compared to the responsivity values reported in the literature for state-of-the-art solar-blind photodetectors, this work presents the highest values of responsivity at a given bias and up to sub-250 nm detection threshold. The high responsivity is attributed to an internal gain mechanism operating on these devices. The reverse-bias leakage current across these samples was found to be dominated by thermionic field emission at low biases and Poole-Frenkel emission from a deep trap level (0.7 eV from the conduction band-edge for Al0.50Ga0.50 N) at high biases.read more
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Recent Progress in Solar-Blind Deep-Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors
Chao Xie,Xing-Tong Lu,Xiao-Wei Tong,Zhi-Xiang Zhang,Feng-Xia Liang,Lin Liang,Lin-Bao Luo,Yucheng Wu +7 more
TL;DR: In this article, a comprehensive review of the applications of inorganic ultrawide-bandgap (UWBG) semiconductors for solar-blind DUV light detection in the past several decades is presented.
Journal ArticleDOI
Metal–Semiconductor–Metal ε-Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism
Yuan Qin,Li-Heng Li,Xiaolong Zhao,Gary S. Tompa,Hang Dong,Guangzhong Jian,Qiming He,Pengju Tan,Xiaohu Hou,Zhongfang Zhang,Shunjie Yu,Haiding Sun,Guangwei Xu,Xiangshui Miao,Kan-Hao Xue,Shibing Long,Shibing Long,Ming Liu,Ming Liu +18 more
TL;DR: In this paper, Ga2O3 solar-blind photodetectors (SBPDs) have received great attention for their potential applications in solar blind imaging, deep space exploration, confidential space communica...
Journal ArticleDOI
High-Responsivity Deep-Ultraviolet-Selective Photodetectors Using Ultrathin Gallium Oxide Films
Seung-Hyun Lee,Soo Bin Kim,Yoon Jong Moon,Sung Min Kim,Hae Jun Jung,Myung Su Seo,Kang Min Lee,Sun Kyung Kim,Sang Woon Lee +8 more
TL;DR: In this paper, a fast, high-responsivity, and general-substrate-compatible DUV photodetectors based on ultrathin (3-50 nm) amorphous gallium oxide (GaOX) films grown by low-temperature (∼ <250 °C) atomic layer deposition (ALD) for the first time were reported.
Journal ArticleDOI
Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays.
Qing Cai,Haifan You,Hui Guo,Jin Wang,Bin Liu,Zili Xie,Dunjun Chen,Hai Lu,Youdou Zheng,Rong Zhang,Rong Zhang +10 more
TL;DR: In this paper, the progress on AlGaN-based solar-blind UV photodetectors and focal plane arrays and FPAs is comprehensively reviewed, and the basic physical properties of the material are presented, including epitaxy and p-type doping problems.
Journal ArticleDOI
Pt/AlGaN Nanoarchitecture: Toward High Responsivity, Self-Powered Ultraviolet-Sensitive Photodetection
Danhao Wang,Xin Liu,Shi Fang,Chen Huang,Yang Kang,Huabin Yu,Zhongling Liu,Haochen Zhang,Ran Long,Yujie Xiong,Yangjian Lin,Yang Yue,Binghui Ge,Tien Khee Ng,Boon S. Ooi,Zetian Mi,Jr-Hau He,Haiding Sun +17 more
TL;DR: This work constructs, for the first time, solar-blind PEC PDs based on self-assembled AlGaN nanostructures on silicon, demonstrating strikingly high responsivity of 45 mA/W and record fast response/recovery time of 47/20 ms without external power source.
References
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TL;DR: In this paper, the authors describe the state-of-the-art computational methodology for calculating the structure and energetics of point defects and impurities in semiconductors and pay particular attention to computational aspects which are unique to defects or impurities, such as how to deal with charge states and how to describe and interpret transition levels.
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F.A. Padovani,R. Stratton +1 more
TL;DR: In this article, the authors derived voltage-current characteristics for field and T-F emission in the forward and reverse regime of Schottky barriers formed on highly doped semiconductors.
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Wide-bandgap semiconductor ultraviolet photodetectors
TL;DR: In this paper, a general review of the advances in widebandgap semiconductor photodetectors is presented, including SiC, diamond, III-nitrides and ZnS.