S
Shih-Hung Chen
Researcher at National Tsing Hua University
Publications - 100
Citations - 4688
Shih-Hung Chen is an academic researcher from National Tsing Hua University. The author has contributed to research in topics: Layer (electronics) & Electrode. The author has an hindex of 31, co-authored 99 publications receiving 4599 citations. Previous affiliations of Shih-Hung Chen include Qimonda & IBM.
Papers
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Journal ArticleDOI
Phase-change random access memory: a scalable technology
Simone Raoux,Geoffrey W. Burr,Matthew J. Breitwisch,Charles T. Rettner,Y.-C. Chen,Robert M. Shelby,Martin Salinga,Daniel Krebs,Shih-Hung Chen,H.L. Lung,Chung H. Lam +10 more
TL;DR: This work discusses the critical aspects that may affect the scaling of PCRAM, including materials properties, power consumption during programming and read operations, thermal cross-talk between memory cells, and failure mechanisms, and discusses experiments that directly address the scaling properties of the phase-change materials themselves.
Proceedings ArticleDOI
Write Strategies for 2 and 4-bit Multi-Level Phase-Change Memory
T. Nirschl,J.B. Phipp,T.D. Happ,Geoffrey W. Burr,Bipin Rajendran,Ming-Hsiu Lee,A.G. Schrott,Min Yang,Matthew J. Breitwisch,C.-F. Chen,Eric A. Joseph,M. Lamorey,R. Cheek,Shih-Hung Chen,Shoaib Hasan Zaidi,S. Raoux,Y.-C. Chen,Y. Zhu,R. Bergmann,Hsiang-Lan Lung,Chung H. Lam +20 more
TL;DR: Novel multi-level write algorithms for phase change memory which produce highly optimized resistance distributions in a minimum number of program cycles are discussed.
Patent
Phase change memory cell and manufacturing method
TL;DR: A phase change memory cell includes first and second electrodes electrically coupled by a phase change element as discussed by the authors, which can transition from crystalline to amorphous states at a lower temperature than the higher reset transition temperature.
Patent
Phase change memory device and manufacturing method
Hsiang-Lan Lung,Shih-Hung Chen +1 more
TL;DR: A phase change memory device comprises a photolithographically formed phase change cell having first and second electrodes and a phase change element positioned between and electrically coupling the opposed contact elements of the electrodes to one another as mentioned in this paper.
Patent
Thin film fuse phase change RAM and manufacturing method
Hsiang-Lan Lung,Shih-Hung Chen +1 more
TL;DR: In this article, a memory device comprising a first electrode having a top side, a second electrode having top side and an insulating member between the first electrode and the second electrode is described.