S
Stefan W. Glunz
Researcher at Fraunhofer Society
Publications - 526
Citations - 20246
Stefan W. Glunz is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Silicon & Solar cell. The author has an hindex of 64, co-authored 507 publications receiving 17212 citations. Previous affiliations of Stefan W. Glunz include University of Freiburg.
Papers
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Proceedings ArticleDOI
Monolithic Perovskite Silicon Tandem Solar Cells with Advanced Optics
Jan Christoph Goldschmidt,Alexander J. Bett,Martin Bivour,Benedikt Bläsi,Johannes Eisenlohr,Markus Kohlstädt,Seunghun Lee,Simone Mastroianni,Laura E. Mundt,Markus Mundus,Paul F. Ndione,Christian Reichel,Martin C. Schubert,Patricia S. C. Schulze,Nico Tucher,Clemens Veit,Welmoed Veurman,Karl Wienands,Kristina Winkler,Uli Würfel,Stefan W. Glunz,Martin Hermle +21 more
TL;DR: In this article, the authors developed low-temperature processes for the perovskite top cell, rear-side light trapping, optimized perov-skite growth, transparent contacts and recombination interconnection layers, and adapted characterization methods.
Patent
Method for making a system comprised of single sequentially arranged solar cells, and the system
TL;DR: In this article, a method for making a solar cell system consisting of single sequentially arranged cells which are contacted on only one side is described, and the method comprises the following steps: a semi-conducting layer of initially one piece is made on an insulating support; single cells each having one selective transmitter and one contact side are sequentially arrange in said semi conducting layer; before or after said system is manufactured, the single cells are electrically separated, then linked in a series connection.
Patent
Procédé de détermination de la durée de vie effective des porteurs de charge d'un substrat semi-conducteur à partir d'une mesure dynamique et différentielle du temps de relaxation de porteurs de charge libres
TL;DR: In this paper, a procedure for determining the duree de vie effective of a porteurs de charge in a semi-conductive environment is presented, in which the authors concerne un procede de determination of the deuxieme densite de porteur de charge en exces Δ n 1 and Δ n 2.
Patent
Method for manufacturing semiconductor component e.g. thin film transistor, involves forming semiconductor layer on intermediate layers arranged on support substrate, and removing portion of substrate to access semiconductor layer
TL;DR: In this paper, a support substrate is provided and a semiconductor layer is formed on the intermediate layers arranged on the substrate, which is then annealed at a temperature of 700[deg] C for preset time duration.
Proceedings ArticleDOI
Potentiostatic Photoluminescence Imaging of Charge Extraction in Perovskite Solar Cells
D.L. Wagner,Patrick Schygulla,Jan Herterich,Mohamed Elshamy,Dmitry Bogachuk,Salma Zouhair,Simone Mastroianni,Uli Würfel,Yuhang Liu,Shaik M. Zakeeruddin,Michael Grätzel,A. Hinsch,Stefan W. Glunz +12 more
TL;DR: In this article , a novel approach for microscopically resolved photocurrent imaging is proposed based on the notion that electrical bias-dependent photoluminescence images reveal fundamental information on charge extraction of photovoltaic devices.