S
Stefan W. Glunz
Researcher at Fraunhofer Society
Publications - 526
Citations - 20246
Stefan W. Glunz is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Silicon & Solar cell. The author has an hindex of 64, co-authored 507 publications receiving 17212 citations. Previous affiliations of Stefan W. Glunz include University of Freiburg.
Papers
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Proceedings ArticleDOI
New simplified methods for patterning the rear contact of RP-PERC high-efficiency solar cells
Stefan W. Glunz,Ralf Preu,Sebastian Schaefer,E. Schneiderlochner,Wilhelm Pfleging,Ralf Lüdemann,Gerhard Willeke +6 more
TL;DR: In this paper, two processing schemes for fabricating the rear contact pattern of the PERC-structure (passivated emitter and rear cell) are demonstrated. And both, thermally-grown silicon oxide (SiO/sub 2/) and plasma-deposited silicon nitride (SiN/sub x/) are used as the passivating rear layer.
Journal ArticleDOI
Towards industrial n-type PERT silicon solar cells: Rear passivation and metallization scheme
Armin Richter,Jan Benick,Andre Kalio,J. Seiffe,Matthias Hörteis,Martin Hermle,Stefan W. Glunz +6 more
TL;DR: In this paper, the authors presented an industrially feasible passivation and contacting scheme for the front side boron emitter of n-type silicon solar cells based on firing processes.
Journal ArticleDOI
Phosphorus-doped SiC as an excellent p-type Si surface passivation layer
TL;DR: The passivation properties of phosphorus-doped amorphous silicon carbide (a-SixC1−x) layers on monocrystalline Si wafers (floating zone, 1Ωcm) have been investigated in this article.
Journal ArticleDOI
Temperature-induced stoichiometric changes in thermally grown interfacial oxide in tunnel-oxide passivating contacts
Jana-Isabelle Polzin,Jana-Isabelle Polzin,Stefan Lange,Susanne Richter,Anamaria Moldovan,Martin Bivour,Christian Hagendorf,Martin Hermle,Stefan W. Glunz,Stefan W. Glunz,Frank Feldmann +10 more
TL;DR: The stoichiometry of differently prepared interfacial oxides in the as-grown state was investigated by XPS in this paper, and the stoichiometric changes in the oxide layer upon subsequent contact formation (thermal annealing) were analyzed after selective etch back of the doped poly-Si layer.
Journal ArticleDOI
Silicon nanocrystals embedded in silicon carbide: Investigation of charge carrier transport and recombination
Philipp Löper,Mariaconcetta Canino,Dureid Qazzazie,Manuel Schnabel,M. Allegrezza,Caterina Summonte,Stefan W. Glunz,Stefan Janz,Margit Zacharias +8 more
TL;DR: In this paper, an illumination-dependent analysis of silicon nanocrystal p-i-n solar cells is presented within the framework of the constant field approximation, and an effective mobility lifetime product of 10−10 cm2/V is derived.