Stefan W. Glunz

TL;DR: In this work, semi-transparent perovskite solar cells in the regular n-i-p structure are presented with tin-doped indium oxide (ITO) directly sputtered on the hole conducting material Spiro-OMeTAD, and ITO process parameters such as sputter power, temperature, and pressure in the chamber are systematically varied.

TL;DR: In this paper, the influence of the bulk lifetime and the resistivity of the base material on the cell performance was investigated for industrial solar cell architectures and a consistent set of cell and simulation parameters were chosen to allow for a direct quantitative comparison of the different cell types.

TL;DR: In this article, back-contacted back-junction n-type silicon solar cells featuring a large emitter coverage (point-like base contacts), a small base and emitter contacts, and interdigitated metal fingers have been fabricated and analyzed.

TL;DR: In this article, the lifetime-limiting defect level in intentionally aluminum-contaminated Czochralski silicon has been analyzed and a complete set of defect parameters could be obtained.

TL;DR: In this paper, the authors investigated three different solar cell fabrication routes, categorized according to the temperature of the junction formation process and the wafer doping type, and achieved an efficiency of 19.5% or greater on wafers less than 100 mm thick, with a maximum efficiency of 21.1% on an 80 mm m-thick wafer.