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Stefan W. Glunz

Researcher at Fraunhofer Society

Publications -  526
Citations -  20246

Stefan W. Glunz is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Silicon & Solar cell. The author has an hindex of 64, co-authored 507 publications receiving 17212 citations. Previous affiliations of Stefan W. Glunz include University of Freiburg.

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Journal ArticleDOI

Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

TL;DR: In this paper, a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF2) and the ion dose (5'×'1014'cm−2 to 1'× '1016' cm−2) on the subsequent high-temperature anneal on the passivation quality and junction characteristics using doublesided contacted silicon solar cells.
Journal ArticleDOI

Experimental analysis of upconversion with both coherent monochromatic irradiation and broad spectrum illumination

TL;DR: In this article, the external quantum efficiency of an upconverter silicon solar cell, both under monochromatic excitation and, for the first time in the context of silicon solar cells, under broad spectrum illumination, was investigated for the application to harvest solar energy.
Proceedings ArticleDOI

Laser-doped silicon solar cells by Laser Chemical Processing (LCP) exceeding 20% efficiency

TL;DR: In this article, the authors present experimental investigations on simple device structures to choose optimal laser parameters for selective emitter formation, which are used to fabricate high-efficiency oxide-passivated LFC solar cells that exceed 20% efficiency.
Proceedings ArticleDOI

Shading effects in back-junction back-contacted silicon solar cells

TL;DR: In this article, electrical shading losses due to recombination in the region of base busbar and fingers are analyzed using two-dimensional numerical device and network simulations, and the base doping dependence of these effects is investigated as well as the influence of the rear side passivation.
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Recent developments in rear-surface passivation at Fraunhofer ISE

TL;DR: In this paper, Fraunhofer ISE used a low-temperature passivation stack of hydrogenated amorphous silicon and plasma-enhanced chemical vapor deposition (PECVD) silicon oxide to achieve an efficiency of up to 21.7%.