S
Stefan W. Glunz
Researcher at Fraunhofer Society
Publications - 526
Citations - 20246
Stefan W. Glunz is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Silicon & Solar cell. The author has an hindex of 64, co-authored 507 publications receiving 17212 citations. Previous affiliations of Stefan W. Glunz include University of Freiburg.
Papers
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Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si‐SiO2 interface
TL;DR: In this article, the experimentally observed dependence of effective surface recombination velocity Seff at the Si-SiO2 interface on light-induced minority carrier excess concentration is compared with theoretical predictions of an extended Shockley-Read-Hall (SRH) formalism.
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High efficiency n-type Si solar cells on Al2O3-passivated boron emitters
Jan Benick,Bram Hoex,M.C.M. van de Sanden,Wilhelmus Mathijs Marie Kessels,O. Schultz,Stefan W. Glunz +5 more
TL;DR: In this paper, negative charge dielectric Al2O3 was applied as surface passivation layer on high-efficiency n-type silicon solar cells, achieving a confirmed conversion efficiency of 23.2% on B-doped emitters.
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Laser‐fired rear contacts for crystalline silicon solar cells
TL;DR: In this article, a laser-based process is used to alloy the contact points through the dielectric layer of a passivated emitter and a metal layer on top of a rear cell.
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Diffusion lengths of silicon solar cells from luminescence images
TL;DR: In this paper, a spatially resolved measurement of the minority carrier diffusion length in silicon wafers and in silicon solar cells is introduced, which is based on measuring the ratio of two luminescence images taken with two different spectral filters.
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Minority carrier lifetime degradation in boron-doped Czochralski silicon
TL;DR: In this article, the authors showed that the minority carrier lifetime in boron-doped oxygen-contaminated Czochralski (Cz) silicon is strongly reduced under illumination or carrier injection.