S
Sven Höfling
Researcher at University of Würzburg
Publications - 915
Citations - 25038
Sven Höfling is an academic researcher from University of Würzburg. The author has contributed to research in topics: Quantum dot & Photon. The author has an hindex of 67, co-authored 870 publications receiving 20424 citations. Previous affiliations of Sven Höfling include University of Science and Technology of China & Conrad Hotels.
Papers
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Journal ArticleDOI
Acousto-optical nanoscopy of buried photonic nanostructures
Thomas Czerniuk,Christian Schneider,Martin Kamp,Sven Höfling,B. A. Glavin,Dmitri R. Yakovlev,A. V. Akimov,Manfred Bayer +7 more
TL;DR: In this article, the authors developed a nanoscopy method with in-depth resolution for layered photonic devices, which is based on the uniqueness of the light field distributions in photonic device.
Proceedings ArticleDOI
Characterization of GaAs/AlGaAs resonant tunneling diodes witha GaInNAs absorption layer as 1.3 μm photo sensors
Fabian Hartmann,Fabian Langer,D. Bisping,A. Musterer,Sven Höfling,M. Kamp,Alfred Forchel,L. Worschech +7 more
TL;DR: In this article, a double-barrier resonant-tunneling diodes (RTD) were grown by molecular beam epitaxy with a nearby lattice-matched GaInNAs absorption layer.
Proceedings ArticleDOI
Cavity quantum electrodynamics effects in electrically driven high-Q micropillar cavities
C. Kistner,Tobias Heindel,Stephan Reitzenstein,C. Böckler,C. Schneider,Sven Höfling,Alfred Forchel +6 more
TL;DR: In this paper, the authors realized high-quality electrically pumped mircopillar cavities featuring pronounced cQED effects, such as weak coupling and high-beta lasing.
Journal ArticleDOI
InP-Substrate-Based Quantum Dashes on a DBR as Single-Photon Emitters at the Third Telecommunication Window.
Paweł Wyborski,Anna Musiał,Paweł Mrowiński,P. Podemski,Vasilij Baumann,Piotr Andrzej Wroński,Fauzia Jabeen,Sven Höfling,Grzegorz Sęk +8 more
TL;DR: In this paper, the authors investigated emission properties of photonic structures with InAs/InGaAlAs/inP quantum dashes grown by molecular beam epitaxy on a distributed Bragg reflector.
Journal ArticleDOI
Topological band structure in InAs/GaSb/InAs triple quantum wells
TL;DR: In this paper, gate voltage and temperature dependent transport measurements of InAs/GaSb/InAs triple quantum wells (TQWs) with a designed hybridization gap energy of 4 meV comparable to its traditional double quantum well counterpart are presented.