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Sven Höfling

Researcher at University of Würzburg

Publications -  915
Citations -  25038

Sven Höfling is an academic researcher from University of Würzburg. The author has contributed to research in topics: Quantum dot & Photon. The author has an hindex of 67, co-authored 870 publications receiving 20424 citations. Previous affiliations of Sven Höfling include University of Science and Technology of China & Conrad Hotels.

Papers
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Injection locking of quantum dot microlasers operating in the few photon regime

TL;DR: In this article, the authors experimentally and theoretically investigate injection locking of quantum dot (QD) microlasers in the regime of cavity quantum electrodynamics (cQED), and observe frequency locking and phase-locking where cavity enhanced spontaneous emission enables simultaneous stable oscillation at the master frequency and at the solitary frequency of the slave microlaser.
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GaAs/AlGaAs quantum cascade microlasers based on monolithic semiconductor-air Bragg mirrors

TL;DR: In this article, the edge emitting GaAs-based quantum cascade micro laser at a wavelength of 9µm was realized by monolithic integration of photonic bandgap mirrors based on deeply etched air-semiconductor Bragg gratings.
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Coherent topological polariton laser

TL;DR: In this paper, the exciton-polariton microcavity traps are arranged in a one-dimensional Su-Schrieffer-Heeger lattice and form a topological defect mode from which they unequivocally observe highly coherent polariton lasing.
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Unconventional collective normal-mode coupling in quantum-dot-based bimodal microlasers

TL;DR: In this paper, the authors analyze the occurrence of normal-mode coupling in bimodal lasers attributed to the collective interaction of the cavity field with a mesoscopic number of quantum dots (QDs).
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Site-controlled InP/GaInP quantum dots emitting single photons in the red spectral range

TL;DR: In this article, site-controlled growth of InP/GaInP quantum dots (QDs) on GaAs substrates is reported, where the QD nucleation sites are defined by shallow nanoholes etched into a GaInP layer.