S
Sven Höfling
Researcher at University of Würzburg
Publications - 915
Citations - 25038
Sven Höfling is an academic researcher from University of Würzburg. The author has contributed to research in topics: Quantum dot & Photon. The author has an hindex of 67, co-authored 870 publications receiving 20424 citations. Previous affiliations of Sven Höfling include University of Science and Technology of China & Conrad Hotels.
Papers
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Proceedings ArticleDOI
Coherence properties of a single-mode polariton laser
Seonghoon Kim,Bo Zhang,Zhaorong Wang,Christian Schneider,Sebastian Brodbeck,Sven Höfling,Martin Kamp,Hui Deng +7 more
TL;DR: In this paper, first and second-order coherence functions of a zero-dimensional microcavity were measured and compared to a two-dimensional system, intensity fluctuations of a polariton laser were significantly reduced which was verified by g(2)(0) = 1.
Journal ArticleDOI
Half adder capabilities of a coupled quantum dot device
P. Pfeffer,Fabian Hartmann,Igor Neri,Anne Schade,Monika Emmerling,Martin Kamp,Luca Gammaitoni,Sven Höfling,Sven Höfling,L. Worschech +9 more
TL;DR: Two realizations of a half adder based on a voltage-rectifying mechanism involving two Coulomb-coupled quantum dots are demonstrated, which are an advancement in the field of energy efficient and autonomous electronics.
Posted Content
Distinguishing photon and polariton lasing from GaAs microcavities by spectral and temporal analysis of the two-threshold behavior
Jean-Sebastian Tempel,Franziska Veit,Marc Aßmann,L. E. Kreilkamp,Arash Rahimi-Iman,Andreas Löffler,Sven Höfling,Stephan Reitzenstein,Lukas Worschech,Alfred Forchel,Manfred Bayer +10 more
TL;DR: In this article, the authors compare polariton lasing with photon lasing of a planar GaAs/GaAlAs microcavity with zero detuning between the bare cavity mode and the bare exciton mode.
Journal ArticleDOI
Exploring the phase diagram of InAs/GaSb/InAs trilayer quantum wells
TL;DR: In this article , topological insulators based on InAs/GaSb/InAs trilayer quantum wells with different InAs thicknesses ranging from 8.0 to 13.5 nm were experimentally ascertain the phase diagram in this material system.
Posted Content
Nonlinear photoluminescence spectra from a quantum dot-cavity system revisited
P. Yao,P. K. Pathak,Stephen H. Hughes,S. Munch,Stephan Reitzenstein,P. Franeck,Andreas Löffler,Tobias Heindel,Sven Höfling,Lukas Worschech,Alfred Forchel +10 more
TL;DR: In this paper, a related and re-worked paper will be submitted at a later date, which will clarify several aspects of the paper and will be published in a later publication.