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Sven Höfling

Researcher at University of Würzburg

Publications -  915
Citations -  25038

Sven Höfling is an academic researcher from University of Würzburg. The author has contributed to research in topics: Quantum dot & Photon. The author has an hindex of 67, co-authored 870 publications receiving 20424 citations. Previous affiliations of Sven Höfling include University of Science and Technology of China & Conrad Hotels.

Papers
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High resolution quantitative multi-species hydrocarbon gas sensing with a cw external cavity quantum cascade laser based spectrometer in the 6-11 μm range

Robert Heinrich, +6 more
- 07 Apr 2019 - 
TL;DR: In this paper, a continuous wave external-cavity quantum cascade laser based spectrometer was used to measure direct absorption spectra of the first 7 alkanes and their mixtures.
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Observation of gain-pinned dissipative solitons in a microcavity laser

Maciej Pieczarka, +8 more
TL;DR: In this paper, an experimental approach for creating spatially localized states in a semiconductor microcavity laser with a nonresonant, pulsed optical pump is presented.
Journal ArticleDOI

Room temperature operation of ultra-short quantum cascade lasers with deeply etched Bragg mirrors

Sven Höfling, +3 more
- 09 Jun 2005 - 
TL;DR: In this article, a bound-to-continuum quantum cascade microlaser with ridge waveguide geometry is fabricated by the monolithic integration of deeply etched semiconductor-air Bragg mirrors.
Posted Content

Visualising Berry phase and diabolical points in a quantum exciton-polariton billiard

Eliezer Estrecho, +8 more
- 20 Jul 2016 - 
TL;DR: A diabolical point and the corresponding Berry phase in the spectrum of hybrid light-matter quasiparticles—exciton-polaritons in semiconductor microcavities is demonstrated and the Berry phase is observed and measured by direct imaging of the macroscopic exciton- polariton probability densities.
Journal ArticleDOI

Submonolayer Uniformity of Type II InAs/GaInSb W-shaped Quantum Wells Probed by Full-Wafer Photoluminescence Mapping in the Mid-infrared Spectral Range.

M. Dyksik, +8 more
- 15 Oct 2015 - 
TL;DR: A very small variation of PL peak energy over the wafer indicates InAs quantum well width fluctuation of only a fraction of a monolayer and hence extraordinary thickness accuracy, a conclusion further supported by high uniformity of both the emission intensity and PL linewidth.