S
Sven Höfling
Researcher at University of Würzburg
Publications - 915
Citations - 25038
Sven Höfling is an academic researcher from University of Würzburg. The author has contributed to research in topics: Quantum dot & Photon. The author has an hindex of 67, co-authored 870 publications receiving 20424 citations. Previous affiliations of Sven Höfling include University of Science and Technology of China & Conrad Hotels.
Papers
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Journal ArticleDOI
Compensation of phonon-induced renormalization of vacuum Rabi splitting in large quantum dots: Towards temperature-stable strong coupling in the solid state with quantum dot-micropillars
C. Hopfmann,Anna Musiał,Anna Musiał,Max Strauß,Andreas M. Barth,Martin Glässl,Alexei Vagov,Christian Schneider,Sven Höfling,Sven Höfling,Martin Kamp,Vollrath M. Axt,Stephan Reitzenstein +12 more
TL;DR: In this paper, the authors investigated the influence of temperature on the emission characteristics of quantum dot-micropillars in the strong coupling regime of cavity quantum electrodynamics (cQED).
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Charging dynamics of a floating gate transistor with site-controlled quantum dots
P. Maier,Fabian Hartmann,Monika Emmerling,Christian Schneider,Sven Höfling,Martin Kamp,L. Worschech +6 more
TL;DR: In this article, a quantum dot memory based on a GaAs/AlGaAs quantum wire with site-controlled InAs quantum dots was realized by means of molecular beam epitaxy and etching techniques.
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Resonantly probing micropillar cavity modes by photocurrent spectroscopy
TL;DR: In this article, the authors demonstrate electrical readout of high quality quantum dot micropillars by means of photocurrent (PC) spectroscopy under resonant excitation and apply this technique to enable a high spectral resolution mapping of the optical mode spectrum of the microplar revealing quality factors of up to 11'000 for a 3'μm diameter device.
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Resonant tunneling of electrons in AlSb/GaInAsSb double barrier quantum wells
Edgar David Guarin Castro,Edgar David Guarin Castro,Florian Rothmayr,Sebastian Krüger,Georg Knebl,Anne Schade,Johannes Koeth,Lukas Worschech,Victor Lopez-Richard,Gilmar E. Marques,Fabian Hartmann,Andreas Pfenning,Sven Höfling +12 more
TL;DR: In this article, the optical and electronic transport properties of n-type AlSb/GaInAsSb double barrier quantum well resonant tunneling diodes (RTDs) were studied.
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Room temperature polariton light emitting diode with integrated tunnel junction.
Sebastian Brodbeck,J.-P. Jahn,A. Rahimi-Iman,Julian Fischer,M. Amthor,Stephan Reitzenstein,Martin Kamp,C. Schneider,Sven Höfling +8 more
TL;DR: A diode incorporating a large number of GaAs quantum wells that emits light from exciton-polariton states at room temperature is presented and electroluminescence studies reveal two polariton branches which are spectrally separated.