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Sven Höfling

Researcher at University of Würzburg

Publications -  915
Citations -  25038

Sven Höfling is an academic researcher from University of Würzburg. The author has contributed to research in topics: Quantum dot & Photon. The author has an hindex of 67, co-authored 870 publications receiving 20424 citations. Previous affiliations of Sven Höfling include University of Science and Technology of China & Conrad Hotels.

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Linewidth broadening and emission saturation of a resonantly excited quantum dot monitored via an off-resonant cavity mode

TL;DR: In this article, the robustness of a detuned mode channel for reading out the relevant $s$-shell properties of a resonantly excited coupled quantum dot (QD) in a pillar microcavity is reported.
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Spatial coherence properties of one dimensional exciton-polariton condensates.

TL;DR: The theory, which was extended to allow for treating incoherent excitation in a stochastic frame, matches the experimental data with good qualitative and quantitative agreement, and allows the prediction that the decay of the off-diagonal long-range order can be almost fully suppressed in one dimensional condensate systems to be verified.
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Numerical and Experimental Study of the $Q$ Factor of High- $Q$ Micropillar Cavities

TL;DR: In this paper, the authors analyzed the contribution of different geometrical parameters, such as the number of DBR layers pairs, the amplitude of the corrugation of the pillar sidewalls, and number of etched layer pairs in the bottom DBR, on the Q versus diameter relation of high-Q semiconductor micropillar cavities.
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Ultrafast tracking of second-order photon correlations in the emission of quantum-dot microresonator lasers

TL;DR: In this paper, the second-order correlation function of light emission was studied for quantum-dot micropillar lasers and the time evolution of the second order correlation function was analyzed.
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Quantum efficiency and oscillator strength of site-controlled InAs quantum dots

TL;DR: In this article, the oscillator strength and quantum efficiency of site-controlled InAs quantum dots nucleating on patterned nanoholes were determined by measurements on SCQD samples with varying thickness of the capping layer.