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Sven Höfling

Researcher at University of Würzburg

Publications -  915
Citations -  25038

Sven Höfling is an academic researcher from University of Würzburg. The author has contributed to research in topics: Quantum dot & Photon. The author has an hindex of 67, co-authored 870 publications receiving 20424 citations. Previous affiliations of Sven Höfling include University of Science and Technology of China & Conrad Hotels.

Papers
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An efficient quantum photonic phase shift in a low Q-factor regime

TL;DR: In this paper, a self-assembled negatively charged quantum dot (QD) in a low Q-factor photonic micropillar is shown to be a suitable design for deterministic polarization switching and spin-photon entanglement.
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GaInNAs-Based High-Power and Tapered Laser Diodes for Pumping Applications

TL;DR: In this paper, a GaInNAs-based high-power laser diodes with emission in the 1220-1240 nm wavelength range are presented, allowing high continuous-wave room-temperature output powers of almost 9 W and emission at a wavelength of 1220 nm.
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Blowup dynamics of coherently driven polariton condensates : experiment

TL;DR: Gavrilov et al. as discussed by the authors reported an experimental verification of the recent prediction that sharp transitions between steady states in multistable cavity-polariton systems are mediated by intermode parametric scattering that triggers the accumulation of energy and hence lowers the threshold at the cost of extending the transition latency period.
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Relaxation Oscillations and Ultrafast Emission Pulses in a Disordered Expanding Polariton Condensate

TL;DR: In this paper, the authors investigated the dynamics of an exciton-polariton condensate which emerges in semiconductor microcavity subject to disorder, which determines its spatial and temporal behaviour.
Proceedings ArticleDOI

Mid infrared DFB interband cascade lasers

TL;DR: In this article, the authors proposed a DFB-based interband cascade laser (ICL) to cover the entire mid infrared spectral range (MIR) almost independently from the bandgap of the utilized semiconductors.