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T. K. Chan

Researcher at National University of Singapore

Publications -  33
Citations -  789

T. K. Chan is an academic researcher from National University of Singapore. The author has contributed to research in topics: Rutherford backscattering spectrometry & Raman spectroscopy. The author has an hindex of 12, co-authored 33 publications receiving 691 citations.

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Magnetism in MoS2 induced by proton irradiation

TL;DR: In this article, a diamagnetic layered dichalcogenide solid, Molybdenum disulphide, was found to show magnetic ordering at room temperature when exposed to a 2 MeV proton beam.
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Magnetism in MoS2 induced by MeV proton irradiation

TL;DR: In this paper, a diamagnetic layered dichalcogenide solid, Molybdenum disulphide, was found to show magnetic ordering at room temperature when exposed to a 2 MeV proton beam.
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The effect of layer number and substrate on the stability of graphene under MeV proton beam irradiation

TL;DR: In this article, a model of intense electronically-stimulated surface desorption of the atoms as the most likely process for this damage mechanism was proposed, and the damage threshold of graphene samples, subjected to 2 MeV H + irradiation, was found to increase with layer number and also when the graphene layer was supported by a substrate.
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Mega-electron-volt proton irradiation on supported and suspended graphene: A Raman spectroscopic layer dependent study

TL;DR: Graphene samples with 1, 2, and 4 layers and 1'+'1 folded bi-layers and graphite have been irradiated with 2 MeV protons at fluences ranging from 1'×'1015' to 6'× '1018' ions/cm2.
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Tuning the interface conductivity of LaAlO3/SrTiO3 using ion beams: implications for patterning.

TL;DR: It is found that this method can be utilized to manipulate the conductivity at the LaAlO3/SrTiO3 interface by carrier localization, arising from the defects created by the ion beam exposure, eventually producing an insulating ground state.