T
Tai-Yuan Wu
Researcher at Industrial Technology Research Institute
Publications - 28
Citations - 1018
Tai-Yuan Wu is an academic researcher from Industrial Technology Research Institute. The author has contributed to research in topics: Resistive random-access memory & Non-volatile memory. The author has an hindex of 14, co-authored 28 publications receiving 966 citations. Previous affiliations of Tai-Yuan Wu include Minghsin University of Science and Technology.
Papers
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Journal ArticleDOI
Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap
H. Y. Lee,Yu-Hsiu Chen,Pang-Shiu Chen,Tai-Yuan Wu,Feng Chen,Ching-Chiun Wang,Pei-Jer Tzeng,M.-J. Tsai,Chiu-Wang Lien +8 more
TL;DR: In this paper, the memory performance of hafnium oxide (HfOx)-based resistive memory containing a thin reactive Ti buffer layer can be greatly improved due to the excellent ability of Ti to absorb oxygen atoms from the HfOx film after post-metal annealing.
Proceedings Article
A 5ns fast write multi-level non-volatile 1 K bits RRAM memory with advance write scheme
Shyh-Shyuan Sheu,Pei-Chia Chiang,Wen-Pin Lin,Heng-Yuan Lee,Pang-Shiu Chen,Yu-Sheng Chen,Tai-Yuan Wu,Frederick T. Chen,Keng-Li Su,Ming-Jer Kao,Kuo-Hsing Cheng,Ming-Jinn Tsai +11 more
TL;DR: A 1-Kb HfO2 based RRAM for high speed nonvolatile memory application is proposed, which includes a 1T1R RRAM cell and a voltage write circuit, which limit the current through the memory cell.
Journal ArticleDOI
An Ultrathin Forming-Free $\hbox{HfO}_{x}$ Resistance Memory With Excellent Electrical Performance
Yu-Sheng Chen,Heng-Yuan Lee,Pang-Shiu Chen,Tai-Yuan Wu,Ching-Chiun Wang,Pei-Jer Tzeng,Frederick T. Chen,Ming-Jinn Tsai,Chenhsin Lien +8 more
TL;DR: In this paper, a 3-nm-thick HfOx resistive memory with stable bipolar resistance switching by initial positive or negative voltage sweep has been demonstrated, which exhibits high speed (~10 ns), low operation voltages ( 106 cycles), good nonvolatile property (500 min at 85 °C), and 2-b switching per cell per cell.
Journal ArticleDOI
Fast-Write Resistive RAM (RRAM) for Embedded Applications
Shyh-Shyuan Sheu,Kuo-Hsing Cheng,Meng-Fan Chang,Pei-Chia Chiang,Wen-Pin Lin,Heng-Yuan Lee,Pang-Shiu Chen,Yu-Sheng Chen,Tai-Yuan Wu,Frederick T. Chen,Keng-Li Su,Ming-Jer Kao,Ming-Jinn Tsai +12 more
TL;DR: A new resistive RAM device with fast write operation is described with the aim to improve the speed of embedded nonvolatile memories.
Patent
Resistive random access memory and method for fabricating the same
TL;DR: In this article, a resistive random access memory and a method for fabricating the same are provided, which includes forming a bottom electrode on a substrate, forming a metal oxide layer on the bottom electrode, forming an oxygen atom gettering layer, and forming a first top electrode sub-layer on the oxygen atom gettingtering layer.