Open AccessProceedings Article
A 5ns fast write multi-level non-volatile 1 K bits RRAM memory with advance write scheme
Shyh-Shyuan Sheu,Pei-Chia Chiang,Wen-Pin Lin,Heng-Yuan Lee,Pang-Shiu Chen,Yu-Sheng Chen,Tai-Yuan Wu,Frederick T. Chen,Keng-Li Su,Ming-Jer Kao,Kuo-Hsing Cheng,Ming-Jinn Tsai +11 more
- pp 82-83
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TLDR
A 1-Kb HfO2 based RRAM for high speed nonvolatile memory application is proposed, which includes a 1T1R RRAM cell and a voltage write circuit, which limit the current through the memory cell.Abstract:
A 1-Kb HfO 2 based RRAM for high speed nonvolatile memory application is proposed. With this chip, a high speed write characteristic in the RRAM cell can be achieved. The present circuit design includes a 1T1R RRAM (1 transistor/1 resistive memory) cell and a voltage write circuit, which limit the current through the memory cell. The random write time at VDD = 3.3V is as fast as 5 ns in the RRAM, which were fabricated with a 0.18 µm TSMC process.read more
Citations
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Journal ArticleDOI
Metal–Oxide RRAM
Hon-Sum Philip Wong,Heng-Yuan Lee,Shimeng Yu,Yu-Sheng Chen,Yi Wu,Pang-Shiu Chen,Byoungil Lee,Frederick T. Chen,Ming-Jinn Tsai +8 more
TL;DR: The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide resistive switching random access memory (RRAM) are discussed, with a focus on the use of RRAM for nonvolatile memory application.
Journal ArticleDOI
The future of electronics based on memristive systems
TL;DR: The state of the art in memristor-based electronics is evaluated and the future development of such devices in on-chip memory, biologically inspired computing and general-purpose in-memory computing is explored.
Journal ArticleDOI
A review of emerging non-volatile memory (NVM) technologies and applications
TL;DR: High-performance and low-cost emerging NVMs may simplify memory hierarchy, introduce non-volatility in logic gates and circuits, reduce system power, and enable novel architectures, and Storage-class memory (SCM) based on high-density NVMs could fill the performance and density gap between memory and storage.
Proceedings ArticleDOI
Evidence and solution of over-RESET problem for HfO X based resistive memory with sub-ns switching speed and high endurance
Hong-Ji Lee,Yu-Hsiu Chen,P. S. Chen,P. Y. Gu,Y. Y. Hsu,S. M. Wang,W. H. Liu,C. H. Tsai,Shyh-Shyuan Sheu,P. C. Chiang,W. P. Lin,C. H. Lin,W. S. Chen,Frederick T. Chen,Chen-Hsin Lien,Ming-Jinn Tsai +15 more
TL;DR: In this article, a modified bottom electrode is proposed for the memory device to maintain the memory window and to endure resistive switching up to 1010 cycles, and the performance of the HfO X-based bipolar resistive memory was improved.
Proceedings ArticleDOI
Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity
Yu-Sheng Chen,Heng-Yuan Lee,Pang-Shiu Chen,P. Y. Gu,C. W. Chen,W. P. Lin,W. H. Liu,Y. Y. Hsu,Shyh-Shyuan Sheu,P. C. Chiang,W. S. Chen,Frederick T. Chen,Chen-Hsin Lien,Ming-Jinn Tsai +13 more
TL;DR: In this article, a 30×30 nm2 HfO x resistance random access memory (RRAM) with excellent electrical performances was demonstrated for the scaling feasibility in this work, and a 1 Kb one transistor and one resistor (1T1R) array with robust characteristics was also fabricated successfully.
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