T
Tao Xu
Researcher at Shanghai University
Publications - 88
Citations - 1477
Tao Xu is an academic researcher from Shanghai University. The author has contributed to research in topics: Nanowire & OLED. The author has an hindex of 18, co-authored 83 publications receiving 1221 citations. Previous affiliations of Tao Xu include university of lille & Centre national de la recherche scientifique.
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Journal ArticleDOI
Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires
Vladimir G. Dubrovskii,N. V. Sibirev,G. E. Cirlin,I. P. Soshnikov,Wanghua Chen,Rodrigue Lardé,Emmanuel Cadel,Philippe Pareige,Tao Xu,Bruno Grandidier,J. P. Nys,Didier Stiévenard,M. Moewe,L.C. Chuang,Connie J. Chang-Hasnain +14 more
TL;DR: In this paper, a general model for the vapor-liquid-solid nanowire (NW) growth rates was presented, which accounts for adatom diffusion from the substrate and sidewalls into the Au catalyst drop as well as the Gibbs-Thomson effect of elevated chemical potential in the drop with a curved surface.
Journal ArticleDOI
Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques
Tao Xu,Kimberly A. Dick,Sebastien Plissard,Sebastien Plissard,Thanh Hai Nguyen,Younes Makoudi,Maxime Berthe,J. P. Nys,Xavier Wallart,Bruno Grandidier,Philippe Caroff +10 more
TL;DR: A combined scanning electron microscope, transmission electron microscopy, and scanning tunneling microscopy study of gold-nucleated ternary InAs/InAs(1-x)Sb(x) nanowire heterostructures grown by molecular beam epitaxy finds correlation of the morphological and structural properties of the nanowires with the amount of Sb incorporated during growth.
Journal ArticleDOI
Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires
Vladimir G. Dubrovskii,Vladimir G. Dubrovskii,Tao Xu,Tao Xu,A. Díaz Álvarez,Sebastien Plissard,Sebastien Plissard,Philippe Caroff,Philippe Caroff,Frank Glas,Bruno Grandidier +10 more
TL;DR: A model is developed that demonstrates a self-equilibration effect on the droplet size in self-catalyzed III-V nanowires that leads to arrays ofnanowires with a high degree of uniformity regardless of the initial conditions, while the stationary diameter can be further finely tuned by varying the spacing of the array pitch on patterned Si substrates.
Journal ArticleDOI
Narrowing the length distribution of Ge nanowires.
Vladimir G. Dubrovskii,Vladimir G. Dubrovskii,Tao Xu,Yannick Lambert,J. P. Nys,Bruno Grandidier,Didier Stiévenard,Wanghua Chen,Philippe Pareige +8 more
TL;DR: Experimental data is presented demonstrating a narrowing effect on the length distribution of Ge nanowires synthesized by the Au-catalyzed molecular beam epitaxy on Si substrates and a theoretical model is developed capable of describing this puzzling behavior.
Journal ArticleDOI
Faceted sidewalls of silicon nanowires: Au-induced structural reconstructions and electronic properties
Tao Xu,Jean Philippe Nys,Ahmed Addad,Oleg I. Lebedev,Ana Urbieta,Billel Salhi,Maxime Berthe,Bruno Grandidier,Didier Stiévenard +8 more
TL;DR: Xu et al. as discussed by the authors proposed a method to solve the problem of the Stievenard problem in the context of nanotechnologies, using the Lebedev-Lebedev method.