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Tao Xu

Researcher at Shanghai University

Publications -  88
Citations -  1477

Tao Xu is an academic researcher from Shanghai University. The author has contributed to research in topics: Nanowire & OLED. The author has an hindex of 18, co-authored 83 publications receiving 1221 citations. Previous affiliations of Tao Xu include university of lille & Centre national de la recherche scientifique.

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Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires

TL;DR: In this paper, a general model for the vapor-liquid-solid nanowire (NW) growth rates was presented, which accounts for adatom diffusion from the substrate and sidewalls into the Au catalyst drop as well as the Gibbs-Thomson effect of elevated chemical potential in the drop with a curved surface.
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Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques

TL;DR: A combined scanning electron microscope, transmission electron microscopy, and scanning tunneling microscopy study of gold-nucleated ternary InAs/InAs(1-x)Sb(x) nanowire heterostructures grown by molecular beam epitaxy finds correlation of the morphological and structural properties of the nanowires with the amount of Sb incorporated during growth.
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Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires

TL;DR: A model is developed that demonstrates a self-equilibration effect on the droplet size in self-catalyzed III-V nanowires that leads to arrays ofnanowires with a high degree of uniformity regardless of the initial conditions, while the stationary diameter can be further finely tuned by varying the spacing of the array pitch on patterned Si substrates.
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Narrowing the length distribution of Ge nanowires.

TL;DR: Experimental data is presented demonstrating a narrowing effect on the length distribution of Ge nanowires synthesized by the Au-catalyzed molecular beam epitaxy on Si substrates and a theoretical model is developed capable of describing this puzzling behavior.
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Faceted sidewalls of silicon nanowires: Au-induced structural reconstructions and electronic properties

TL;DR: Xu et al. as discussed by the authors proposed a method to solve the problem of the Stievenard problem in the context of nanotechnologies, using the Lebedev-Lebedev method.