S
Shantanu Agnihotri
Researcher at Indian Institute of Technology Kanpur
Publications - 14
Citations - 226
Shantanu Agnihotri is an academic researcher from Indian Institute of Technology Kanpur. The author has contributed to research in topics: Band gap & Density functional theory. The author has an hindex of 5, co-authored 13 publications receiving 192 citations. Previous affiliations of Shantanu Agnihotri include Indian Institute of Information Technology and Management, Gwalior.
Papers
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Journal ArticleDOI
Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design
Sourabh Khandelwal,Chandan Yadav,Shantanu Agnihotri,Yogesh Singh Chauhan,Arnaud Curutchet,Thomas Zimmer,Jean-Claude De Jaeger,Nicolas Defrance,Tor A. Fjeldly +8 more
TL;DR: In this paper, an accurate and robust surfacepotential-based compact model for simulation of circuits designed with GaN-based high-electron mobility transistors (GaN HEMTs) is presented.
Journal ArticleDOI
Surface-Potential-Based Compact Modeling of Gate Current in AlGaN/GaN HEMTs
TL;DR: In this article, the gate current in AlGaN/GaN high-electron mobility transistors is modeled analytically in a surface potential-based compact model, and a trap-assisted tunneling component is added.
Proceedings ArticleDOI
Recent enhancements in BSIM6 bulk MOSFET model
Harshit Agarwal,Sriramkumar Venugopalan,Maria-Anna Chalkiadaki,Navid Paydavosi,Juan Pablo Duarte,Shantanu Agnihotri,Chandan Yadav,Pragya Kushwaha,Yogesh Singh Chauhan,Christian Enz,Ali M. Niknejad,Chenming Hu +11 more
TL;DR: In this paper, the authors discuss the recent enhancements made in the BSIM6 bulk MOSFET model and validate symmetry of the model by performing Gummel Symmetry Test (GST) in DC and symmetry test for capacitances in AC.
Proceedings Article
BSIM compact MOSFET models for SPICE simulation
Yogesh Singh Chauhan,S. Venugopalan,Navid Paydavosi,Pragya Kushwaha,Srivatsava Jandhyala,Juan Pablo Duarte,Shantanu Agnihotri,Chandan Yadav,Harshit Agarwal,Ali M. Niknejad,Chenming Calvin Hu +10 more
TL;DR: BSIM6 has been developed especially to address symmetry around Vds = 0, thus providing smooth higher order derivatives and BSIM-CMG is a CMC standard surface potential based model for common symmetric double, triple, quadruple and surround gate (nanowire) MOSFETs.
Journal ArticleDOI
Significant Enhancement of the Stark Effect in Rippled Monolayer Blue Phosphorus
TL;DR: In this paper, the impact of a vertical electric field on the electronic properties of rippled monolayer blue phosphorus (blue-P) was explored on the basis of density functional theory calculations.