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Todd Bailey

Researcher at GlobalFoundries

Publications -  83
Citations -  3976

Todd Bailey is an academic researcher from GlobalFoundries. The author has contributed to research in topics: Lithography & Resist. The author has an hindex of 29, co-authored 82 publications receiving 3900 citations. Previous affiliations of Todd Bailey include University of Texas System & IBM.

Papers
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Proceedings ArticleDOI

Step and flash imprint lithography: a new approach to high-resolution patterning

TL;DR: In this article, a template is created on a standard mask blank by using the patterned chromium as an etch mask to produce high-resolution relief images in the quartz.
Journal ArticleDOI

Step and flash imprint lithography: Template surface treatment and defect analysis

TL;DR: In this paper, an automated tool for step and flash imprint lithography was constructed to allow defect studies by making multiple imprints on a 200 mm wafer, and the imprint templates for this study were treated with a low surface energy, self-assembled monolayer to ensure selective release at the template-etch barrier interface.
PatentDOI

Template for room temperature, low pressure micro- and nano-imprint lithography

TL;DR: In this article, imprint lithography templates are used to form an imprinted layer in a light curable liquid disposed on a substrate, and during use, the template may be disposed within a template holder.
Journal ArticleDOI

Patterning curved surfaces: Template generation by ion beam proximity lithography and relief transfer by step and flash imprint lithography

TL;DR: In this paper, a 1 in. diameter curved surface with a 46 mm radius of curvature was demonstrated with step and flash imprint lithography (SFIL) using templates patterned by ion beam proximity printing (IBP).
Journal ArticleDOI

Step and flash imprint lithography: Defect analysis

TL;DR: Inspection of an imprint template before and after imprinting revealed that the template actually becomes cleaner with imprinting, and visual inspection of multiple imprints did not reveal any systematic generation or propagation of defects.