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Xu Zhang
Researcher at Massachusetts Institute of Technology
Publications - 27
Citations - 2435
Xu Zhang is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Schottky diode & Graphene. The author has an hindex of 16, co-authored 23 publications receiving 1850 citations. Previous affiliations of Xu Zhang include Carnegie Mellon University.
Papers
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Journal ArticleDOI
Raman enhancement effect on two-dimensional layered materials: graphene, h-BN and MoS2
Xi Ling,Wenjing Fang,Yi-Hsien Lee,Paulo T. Araujo,Xu Zhang,Joaquin F. Rodriguez-Nieva,Yuxuan Lin,Jin Zhang,Jing Kong,Mildred S. Dresselhaus +9 more
TL;DR: H-BN and MoS2 are identified as two different types of 2D materials with potential for use as Raman enhancement substrates and both charge transfer and dipole-dipole coupling may occur, although weaker in magnitude, forMoS2.
Journal ArticleDOI
Role of interfacial oxide in high-efficiency graphene-silicon Schottky barrier solar cells.
Yi Song,Xinming Li,Charles Mackin,Xu Zhang,Wenjing Fang,Tomas Palacios,Hongwei Zhu,Jing Kong +7 more
TL;DR: It is shown that the native oxide on the silicon presents a transport barrier for photogenerated holes and causes recombination current, which is responsible for causing the kink, and a simple semiconductor physics model is proposed that qualitatively captures the effect.
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Two-dimensional MoS2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting.
Xu Zhang,Jesus Grajal,J. L. Vazquez-Roy,Ujwal Radhakrishna,Xiaoxue Wang,Winston Chern,Lin Zhou,Yuxuan Lin,Pin-Chun Shen,Xiang Ji,Xi Ling,Ahmad Zubair,Yuhao Zhang,Han Wang,Madan Dubey,Jing Kong,Mildred S. Dresselhaus,Tomas Palacios +17 more
TL;DR: This work fabricates a fully flexible and integrated rectenna that achieves wireless energy harvesting of electromagnetic radiation in the Wi-Fi band with zero external bias (battery-free) and provides a universal energy-harvesting building block that can be integrated with various flexible electronic systems.
Journal ArticleDOI
Parallel Stitching of 2D Materials.
Xi Ling,Yuxuan Lin,Qiong Ma,Ziqiang Wang,Yi Song,Lili Yu,Shengxi Huang,Wenjing Fang,Xu Zhang,Allen Hsu,Ya-Qing Bie,Yi-Hsien Lee,Yimei Zhu,Lijun Wu,Ju Li,Pablo Jarillo-Herrero,Mildred S. Dresselhaus,Tomas Palacios,Jing Kong +18 more
TL;DR: The CVD methodology enables the large-scale fabrication of lateral heterostructures, which offers tremendous potential for its application in integrated circuits.
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High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits.
TL;DR: This work experimentally demonstrate a novel high performance air-stable WSe2 CMOS technology with almost ideal voltage transfer characteristic, full logic swing and high noise margin with different supply voltages, paving the way for low power electronic system in 2D materials.