T
Tsutomu Uesugi
Researcher at Toyota
Publications - 97
Citations - 1743
Tsutomu Uesugi is an academic researcher from Toyota. The author has contributed to research in topics: Layer (electronics) & Semiconductor device. The author has an hindex of 21, co-authored 92 publications receiving 1495 citations. Previous affiliations of Tsutomu Uesugi include Nagoya University & Nagoya Institute of Technology.
Papers
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Journal ArticleDOI
GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
Masahito Kodama,Masahiro Sugimoto,Eiko Hayashi,Narumasa Soejima,Osamu Ishiguro,Masakazu Kanechika,Kenji Itoh,Hiroyuki Ueda,Tsutomu Uesugi,Tetsu Kachi +9 more
TL;DR: In this article, a novel method for fabricating trench structures on GaN was developed and a smooth non-polar (1100) plane was obtained by wet etching using tetramethylammonium hydroxide (TMAH) as the etchant.
Journal ArticleDOI
A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor
Masakazu Kanechika,Masahiro Sugimoto,Narumasa Soejima,Hiroyuki Ueda,Osamu Ishiguro,Masahito Kodama,Eiko Hayashi,Kenji Itoh,Tsutomu Uesugi,Tetsu Kachi +9 more
TL;DR: In this article, a vertical insulated gate AlGaN/GaN heterojunction field effect transistor (HFET) was fabricated using a free-standing GaN substrate, which exhibited a specific on-resistance of as low as 2.6 mΩ·cm2 with a threshold voltage of -16 V.
Patent
Vertical semiconductor device
TL;DR: In this paper, the super junction structure of a vertical MOS field effect transistor (VFE transistor) has been used to increase the withhold voltage of a VFE transistor by placing an insulating region outside a silicon single crystal region.
Journal ArticleDOI
P-type doping of GaN(000\bar{1}) by magnesium ion implantation
TL;DR: In this paper, the currentvoltage characteristics of p-n diodes fabricated on a GaN substrate showed distinct rectification at a turn-on voltage of about 3 V.
Patent
Group III nitride semiconductor device
TL;DR: A semiconductor device is formed by a first layer 32 composed of AlGaN, a second layer 42 composed of GaN and a gate electrode 34, a source electrode 38, and a drain electrode 28 as mentioned in this paper.