U
Udo Schwalke
Researcher at Technische Universität Darmstadt
Publications - 160
Citations - 1532
Udo Schwalke is an academic researcher from Technische Universität Darmstadt. The author has contributed to research in topics: Gate oxide & Gate dielectric. The author has an hindex of 17, co-authored 160 publications receiving 1453 citations. Previous affiliations of Udo Schwalke include Siemens & Infineon Technologies.
Papers
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Journal ArticleDOI
Origin of the threshold voltage instability in SiO 2 /HfO 2 dual layer gate dielectrics
A. Kerber,E. Cartier,Luigi Pantisano,Robin Degraeve,Thomas Kauerauf,Y. Kim,A. Hou,Guido Groeseneken,Herman Maes,Udo Schwalke +9 more
TL;DR: In this paper, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows: a defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge.
Proceedings ArticleDOI
Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/ gate dielectrics
A. Kerber,Eduard A. Cartier,Luigi Pantisano,Maarten Rosmeulen,Robin Degraeve,Thomas Kauerauf,Guido Groeseneken,H.E. Maes,Udo Schwalke +8 more
TL;DR: In this article, time-resolved measurement techniques down to the /spl mu/s time range are applied to capture the fast transient component of the charge trapping observed in SiO/sub 2/HfO/ sub 2/ dual layer gate stacks.
Journal ArticleDOI
Charge trapping and dielectric reliability of SiO/sub 2/-Al/sub 2/O/sub 3/ gate stacks with TiN electrodes
A. Kerber,Eduard A. Cartier,Robin Degraeve,Philippe Roussel,Luigi Pantisano,Thomas Kauerauf,Guido Groeseneken,H.E. Maes,Udo Schwalke +8 more
TL;DR: In this article, a detailed study on charge trapping and dielectric reliability of SiO/sub 2/O/Sub 3/ gate stacks with TiN electrodes has been carried out, and due to the inherent asymmetry of the dual layer stack all electrical properties studied were found to be strongly polarity dependent.
Journal ArticleDOI
Ultra-thick gate oxides: charge generation and its impact on reliability
TL;DR: It is suggested, that impact ionization and related electron–hole pair creation by energetic electrons is responsible for the experimental observations and for the interpretation of lifetime extrapolations from accelerated tests.
Journal ArticleDOI
Charge trapping in SiO 2 /HfO 2 gate dielectrics: comparison between charge-pumping and pulsed I D -V G
A. Kerber,E. Cartier,Luigi Pantisano,Robin Degraeve,Guido Groeseneken,Herman Maes,Udo Schwalke +6 more
TL;DR: In this article, a detailed comparison between the two techniques is made using various experimental conditions, and it is demonstrated that charge-pumping and pulsed ID-VG measurements yield equivalent results, when base level, charging times and device geometry are chosen carefully.