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Showing papers by "Vivek Garg published in 2021"


Journal ArticleDOI
TL;DR: In this paper, a simulation approach of transient analysis on single cavity dielectric-modulated (DM) ${p}$ -type of tunnel field effect transistor (TFET) is examined for biosensing applications.
Abstract: In this work, a new simulation approach of transient analysis on single cavity dielectric-modulated (DM) ${p}$ -type of tunnel field-effect transistor (TFET) is examined for biosensing applications. The device operation and performance are investigated using the 2D device simulator and results are well-calibrated with experimental data. In this work, we have examined DC transfer characteristics, the transient response of drain current, drain current sensitivity ( ${S}$ ), and selectivity ( $\Delta {S}$ ). Focussing more on the transient results, we have obtained maximum sensitivity of orders greater than 108 for APTES biomolecule with respect to air and a significant selectivity value in orders of 103 for APTES with respect to Biotin biomolecule. The performance of the device in terms of selectivity can be further improved (~104) by optimizing the back-gate bias, and therefore, the impact of back-gate bias has been analysed. The results for charged biomolecules and partially filled cavity are further investigated & highlighted. The DM ${p}$ -TFET biosensor shows a significant improvement in the results with the transient response for biosensing applications with the feasibility of operating at low voltages (gate voltage of −2.0 V, drain voltage of −0.5 V and back gate voltage 0 to 0.5 V).

25 citations


Journal ArticleDOI
TL;DR: In this paper, a planar homojunction perovskite photovoltaic device has been simulated by solar cell capacitance simulator (SCAPS) simulation analysis shows the dependence of PCE on the thickness and defects of the perovsite layer Recombination analysis at different junctions has been simulate using hypothetical interface layers at the respective junctions It has been revealed that the interface defects influence the device performance.
Abstract: Perovskite-based solar cells with planar configuration have been perceived as an alternative and attractive option for photovoltaic technology due to high power conversion efficiency (PCE) The performance of heterojunction-based devices is hindered by the recombination in the perovskite layers The homojunction is suitable for further improvement in PCE due to the built-in electric field, which will enhance the transport of photogenerated charge carriers, therefore, reducing recombination losses A detailed analysis of the homojunction-based device is needed for further improvement in PCE In this study, the planar homojunction perovskite photovoltaic device has been simulated by solar cell capacitance simulator (SCAPS) Simulation analysis shows the dependence of PCE on the thickness and defects of the perovskite layer Recombination analysis at the different junctions has been simulated using hypothetical interface layers at the respective junctions It has been revealed that the interface defects influence the device performance The proposed MAPbI3 homojunction-based devices have achieved more than 23% PCE, which is significantly higher than the existing planar heterojunction-based devices

21 citations


Journal ArticleDOI
TL;DR: In this article, an ultrathin layer of ZnS is deposited over Mo-coated soda lime glass substrate before depositing CZTSSe using sputtering, and the crystal structure of the deposited CZTsSe thin films over Zns is recognized as (112)-oriented, polycrystalline in nature, and free from the presence of any secondary phases such as Cu2(S,Se) or Zn
Abstract: Back-contact modification using a 10-nm ZnS layer in CZTSSe-based solar cell can play a crucial role in improving photovoltaic conversion efficiency. An ultrathin layer of ZnS is deposited over Mo-coated soda lime glass substrate before depositing CZTSSe using sputtering. The crystal structure of deposited CZTSSe thin films over ZnS is recognized as (112)-oriented, polycrystalline in nature, and free from the presence of any secondary phases such as Cu2(S,Se) or Zn(S,Se). The bandgap of CZTSSe thin films deposited over ultrathin ZnS is observed to increase from 1.49 (deposited over Mo directly) to 1.58 eV at room temperature, as determined by spectroscopic ellipsometry. In addition, numerical simulation has been performed using SCAPS software. The impact of ZnS layer has been simulated by using the defects in the absorber and at the interface of ZnS/CZTSSe. The simulated results have been validated with experimentally fabricated CZTSSe device. Simulated device with ZnS intermediate layer is observed to give rise to a photovoltaic conversion efficiency of 15.2%.

13 citations


Journal ArticleDOI
TL;DR: In this article, the authors reported a unique methodology of triggering plasmonic excitations in sputtered ultrathin CIGSe films using field emission scanning electron microscopy (FESEM).

8 citations


Book ChapterDOI
07 Apr 2021
TL;DR: The transfusion includes administration of CP containing a high value of neutralizing antibodies against the virus in hospitalized patients, which summarizes the potential outcome of CP therapy in the treatment of nCoV-2019 patients.
Abstract: Novel Coronavirus (nCoV-2019) is a highly infectious viral outbreak that has so far infected more than 110 million people worldwide. Fast viral transmission and high infection rates have severely affected the entire population, especially the old aged and comorbid individuals leaving significantly less time to find some effective treatment strategy. In these challenging times, convalescent plasma (CP) therapy came as a ray of hope to save humankind. It is a form of passive immunization that has been used to treat various infectious diseases since 1890, including the 1918 Spanish flu, 2002/03 SARS-CoV, 2009 H1N1, 2012 MERS-CoV, and 2014 Ebola outbreak. The transfusion includes administration of CP containing a high value of neutralizing antibodies against the virus in hospitalized patients. This chapter summarizes the potential outcome of CP therapy in the treatment of nCoV-2019 patients.

3 citations


Proceedings ArticleDOI
20 Jun 2021
TL;DR: In this article, a lead-free Cs3Sb2Br9 (Cesium Antimony Bromide) perovskite is proposed as an absorber within a solar cell.
Abstract: The proposed lead-free Cs3Sb2Br9 (Cesium Antimony Bromide) perovskite is newly discovered material with numerous beneficial optoelectronics properties and nontoxic. While this proposed perovskite used in optoelectronics applications before. For the first time, we proposed Cs3Sb2Br9 as an absorber within a solar cell device. With its optimized parameters, our proposed perovskite solar cell (PSC) achieved an impressive power conversion efficiency (PCE) of 12.88% having open-circuit voltage (VOC) of 2.07 V, short-circuit current density (JSC) of 7.01 mA/cm2, and fill factor (FF) of 88.63% which is considerable performance of Cs3Sb2Br9 PSC in comparison to other reported Cs based PSCs in the study.

1 citations