다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

[신간의 별자리x] 우리/미술, 그리고 ‘슬픔의 박물관’

Deposits of clastic carbonate-dominated (calciclastic) sedimentary slope systems in the rock record have been identified mostly as linearly-consistent carbonate apron deposits, even though most ancient clastic carbonate slope deposits fit the submarine fan systems better. Calciclastic submarine fans are consequently rarely described and are poorly understood. Subsequently, very little is known especially in mud-dominated calciclastic submarine fan systems. Presented in this study are a sedimentological core and petrographic characterisation of samples from eleven boreholes from the Lower Carboniferous of Bowland Basin (Northwest England) that reveals a >250 m thick calciturbidite complex deposited in a calciclastic submarine fan setting. Seven facies are recognised from core and thin section characterisation and are grouped into three carbonate turbidite sequences. They include: 1) Calciturbidites, comprising mostly of highto low-density, wavy-laminated bioclast-rich facies; 2) low-density densite mudstones which are characterised by planar laminated and unlaminated muddominated facies; and 3) Calcidebrites which are muddy or hyper-concentrated debrisflow deposits occurring as poorly-sorted, chaotic, mud-supported floatstones. These

Phd by thesis

Ju Mei,†,‡,∥ Nelson L. C. Leung,†,‡,∥ Ryan T. K. Kwok,†,‡ Jacky W. Y. Lam,†,‡ and Ben Zhong Tang*,†,‡,§ †HKUST-Shenzhen Research Institute, Hi-Tech Park, Nanshan, Shenzhen 518057, China ‡Department of Chemistry, HKUST Jockey Club Institute for Advanced Study, Institute of Molecular Functional Materials, Division of Biomedical Engineering, State Key Laboratory of Molecular Neuroscience, Division of Life Science, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China Guangdong Innovative Research Team, SCUT-HKUST Joint Research Laboratory, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China

Aggregation-Induced Emission: Together We Shine, United We Soar!

Luminogenic materials with aggregation-induced emission (AIE) attributes have attracted much interest since the debut of the AIE concept in 2001. In this critical review, recent progress in the area of AIE research is summarized. Typical examples of AIE systems are discussed, from which their structure–property relationships are derived. Through mechanistic decipherment of the photophysical processes, structural design strategies for generating new AIE luminogens are developed. Technological, especially optoelectronic and biological, applications of the AIE systems are exemplified to illustrate how the novel AIE effect can be utilized for high-tech innovations (183 references).

Aggregation-induced emission

For the development of radiation-hard Si detectors for the SiD BeamCal (Si Detector Beam Calorimeter) program for International Linear Collider (ILC), n -type Magnetic Czochralski Si detectors have been irradiated first by fast neutrons to fluences of 1.5×10 14 and 3×10 14  n eq /cm 2 , and then by gamma up to 500 Mrad. The motivation of this mixed radiation project is to test the radiation hardness of MCZ detectors that may utilize the gamma/electron radiation to compensate the negative effects caused by neutron irradiation, all of which exists in the ILC radiation environment. By using the positive space charge created by gamma radiation in MCZ Si detectors, one can cancel the negative space charge created by neutrons, thus reducing the overall net space charge density and therefore the full depletion voltage of the detector. It has been found that gamma radiation has suppressed the room temperature reverse annealing in neutron-irradiated detectors during the 5.5 month of time needed to reach a radiation dose of 500 Mrad. The room temperature annealing (RTA) was verified in control samples (irradiated to the same neutron fluences, but going through this 5.5 month RTA without gamma radiation). This suppression is in agreement with our previous predictions, since negative space charge generated during the reverse annealing was suppressed by positive space charge induced by gamma radiation. The effect is that regardless of the received neutron fluence the reverse annealing is totally suppressed by the same dose of gamma rays (500 Mrad). It has been found that the full depletion voltage for the two detectors irradiated to two different neutron fluences stays the same before and after gamma radiation. Meanwhile, for the control samples also irradiated to two different neutron fluences, full depletion voltages have gone up during this period. The increase in full depletion voltage in the control samples corresponds to the generation of negative space charge, and this increase in concentration of negative space charge goes up with the neutron fluence. If we assume the reverse annealing is also taking place for the two gamma-irradiated samples with similarly different concentrations of negative space charge generated, the observed effect of no changes in space charge (no changes in V fd ) in these two gamma-irradiated samples would imply that concentrations of positive space charge created in these two control samples are different at the same gamma dose, and gamma irradiation effectively “switched off”, the RT (room temperature) reverse annealing of neutron irradiation. It has also been found that as soon as the gamma irradiation stops, the RT reverse annealing of neutron irradiation-induced defects resumes with same rate as that of the control detectors. This behavior in mixed radiation samples (neutron plus gamma) would suggest some nonlinear effect (defects induced by mixed-radiations are not additive of those by individual radiation alone), or interaction of radiation induced acceptor-type and donor-type defects.

Complete suppression of reverse annealing of neutron radiation damage during active gamma irradiation in MCZ Si detectors

Conjugated polymers are of great interest owing to their potential in stretchable electronics to function under complex deformation conditions. To improve the performance of conjugated polymers, various structural designs have been proposed and these conjugated polymers are specially applied in exotic optoelectronics. In this work, a series of all-conjugated block copolymers (PII2T-b-PNDI2T) comprising poly(isoindigo-bithiophene) (PII2T) and poly(naphthalenediimide-bithiophene) (PNDI2T) were developed with varied compositions and applied to electret-free phototransistor memory. Accordingly, these memory devices presented p-type transport capability and electrical-ON/photo-OFF memory behavior. We revealed the efficacy of the all-conjugated block copolymer design on improving the memory-photoresponse properties in phototransistor memory. By optimizing the composition of block copolymer, the corresponding device achieved a wide memory window of 36 V and a high memory ratio of 7 × 104 . Collectively, the results of this study indicate a new concept on designing electret-free phototransistor memory by using all-conjugated block copolymer heterojunctions to mitigate the phase separation of conjugated polymer blends. Meanwhile, the intrinsic optoelectronic properties of the constituent conjugated polymers can be well-maintained by using an all-conjugated block copolymer design. This article is protected by copyright. All rights reserved.

Enhancing the Performance of Electret-Free Phototransistor Memory by Using All-Conjugated Block Copolymer.

Diagnostic Efficacy of Non-Contrast Liver Magnetic Resonance Imaging with Multiparametric Sequences in Hepatocellular Carcinoma.

Tremendous research efforts have been dedicated into the field of photoresponsive nonvolatile memory devices owing to their advantages of fast transmitting speed, low latency, and power-saving property that are suitable for replacing current electrical-driven electronics. However, the reported memory devices still rely on the assistance of gate bias to program them, and a real fully photoswitchable transistor memory is still rare. Herein, we report a phototransistor memory device comprising polymer/perovskite quantum dot (QD) hybrid nanocomposites as a photoresponsive floating gate. The perovskite QDs offer an effective discreteness with an excellent photoresponse that are suitable for photogate application. In addition, a series of ultraviolet (UV)-sensitive insulating polymer hosts were designed to investigate the effect of UV light on the memory behavior. We found that a fully photoswitchable memory device was fulfilled by using the independent and sequential photoexcitation between a UV-sensitive polymer host and a visible light-sensitive QD photogates, which produced decent photoresponse, memory switchability, and highly stable memory retention with a memory ratio of 104 over 104 s. This study not only unraveled the mystery in the fully photoswitchable functionality of nonvolatile memory but also enlightened their potential in the next-generation electronics for light-fidelity application.

Fully Photoswitchable Phototransistor Memory Comprising Perovskite Quantum Dot-Based Hybrid Nanocomposites as a Photoresponsive Floating Gate.

High resistivity CZ Si detectors have been irradiated by gamma, neutrons, and protons to various doses/fluences, along with control FZ Si detectors. It has been found that 1) for gamma radiation, CZ Si detectors behave similarly to the HTLT oxygenated FZ Si detectors: no SCSI and there is a build-up of positive space charges. The rate for this build-up is much higher than that for the HTLT oxygenated Si detectors, and is proportional to the oxygen concentration; 2) for neutron radiation, there is little difference between CZ and control FZ (CFZ) silicon detectors: SCSI is observed for both CZ and CFZ Si detectors, and the introduction rate of deep acceptors (beta) for CZ Si detectors is slightly less than that for CFZ Si detectors; and 3) for proton radiation (10 MeV and 20 MeV), although the SCSI is also observed for CZ Si detectors, the 1 MeV neutron-equivalent SCSI fluence is about 3 times higher than that of CZ Si detectors irradiated by neutrons, and beta is about 1/2 of that for HTLT oxygenated Si detectors. High resistivity CZ Si is therefore found behaving similarly to the HTLT oxygenated Si detectors, and even more radiation hard to charged particles.

Wen-Chang Chen

Papers

Complete suppression of reverse annealing of neutron radiation damage during active gamma irradiation in MCZ Si detectors

Enhancing the Performance of Electret-Free Phototransistor Memory by Using All-Conjugated Block Copolymer.

Diagnostic Efficacy of Non-Contrast Liver Magnetic Resonance Imaging with Multiparametric Sequences in Hepatocellular Carcinoma.

Fully Photoswitchable Phototransistor Memory Comprising Perovskite Quantum Dot-Based Hybrid Nanocomposites as a Photoresponsive Floating Gate.

Radiation hardness of high resistivity CZ Si detectors after gamma, neutron and proton radiations