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Wen-Chang Chen
Researcher at National Taiwan University
Publications - 643
Citations - 20822
Wen-Chang Chen is an academic researcher from National Taiwan University. The author has contributed to research in topics: Polymer & Copolymer. The author has an hindex of 70, co-authored 596 publications receiving 18258 citations. Previous affiliations of Wen-Chang Chen include Tokyo Institute of Technology & National Tsing Hua University.
Papers
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Journal ArticleDOI
The silicon drift vertex detector for the STAR experiment at RHIC
S.U. Pandey,R. Bellwied,R. Beuttenmulller,H. Caines,Wen-Chang Chen,D. DiMassimo,H. Dyke,D. Elliot,V. Eremin,M. Grau,Gerald W Hoffmann,T. J. Humanic,I. Ilyashenko,Ivan Kotov,H.W. Kraner,P. Kuczewski,B. Leonhardt,Z. Li,C.J. Liaw,G. LoCurto,P. Middelkamp,R. Minor,Marcelo Gameiro Munhoz,G. Ott,Claude Andre Pruneau,V. L. Rykov,J. Schambach,J. Sedlmeir,B. Soja,E. Sugarbaker,J. Takahashi,K. Wilson,R. Wilson +32 more
TL;DR: The current status of the STAR Silicon Vertex Tracker (SVT) is discussed in this article, where the performance of the SVT is compared to those of the original SDD tracker.
Journal ArticleDOI
High hole mobility from thiophene-thienopyrazine copolymer based thin film transistors
Wen-Ya Lee,Kai-Fang Cheng,Cheng-Liang Liu,Sung-Tso Lin,Chu-Chen Chueh,Feng-Yu Tsai,Wen-Chang Chen +6 more
TL;DR: In this paper, surface morphologies and thin film transistor characteristics of three donor-acceptor conjugated copolymers (PTHTP C7, PTHTP-C12, and PBTHTPC7) are reported.
Journal ArticleDOI
Interpreting the dispersion of χ(3)(−3ω; ω, ω, ω) of polythiophenes
TL;DR: In this article, the dispersion of poly(3-hexylthiophene) and five other polythiophenes which possess a mixed aromatic-quinoid backbone structure has been characterized using third-harmonic generation (THG).
Journal ArticleDOI
Development of 2nd prototype of novel silicon Stripixel detector for PHENIX upgrade
Zheng Li,H. En’yo,Y. Goto,Veljko Radeka,R. Beuttenmuller,Wen-Chang Chen,D. Elliott,Y.H. Guo,Takeo Kawabata,M. Togawa,N. Saito,N. Saito,V. L. Rykov,K. Tanida,Junji Tojo +14 more
TL;DR: In this paper, a Si-stripixel detector has been developed at BNL, which has an active area of about 3 cm × 6 cm, which is divided into two identical halves.