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Wen-Chang Chen

Researcher at National Taiwan University

Publications -  643
Citations -  20822

Wen-Chang Chen is an academic researcher from National Taiwan University. The author has contributed to research in topics: Polymer & Copolymer. The author has an hindex of 70, co-authored 596 publications receiving 18258 citations. Previous affiliations of Wen-Chang Chen include Tokyo Institute of Technology & National Tsing Hua University.

Papers
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Journal ArticleDOI

Influence of polymeric electrets on the performance of derived hybrid perovskite-based photo-memory devices.

TL;DR: The results demonstrate the influence of perovskite NP aggregation at the dielectric/pentacene interface on the resultant memory behavior of the newly developed photo-memory device.
Patent

Test strip and biosensor incorporating with nanometer metal particles

TL;DR: In this paper, a test strip and a biosensor having an increased conductivity and a slurry comprising a fiber, meal particles having a size in nanometer and a bioactive substance is presented.
Journal ArticleDOI

n-Type Doped Conjugated Polymer for Nonvolatile Memory.

TL;DR: This study demonstrates a facile way to efficiently induce strong memory behavior from common p-type conjugated polymers by adding n-type dopant 2-(2-methoxyphenyl)-1, 3-dimethyl-2,3-dihydro-1H-benzoimidazole and suggests that this approach is a general method to induce memory behavior in conjugation polymers.
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Molecular Architecture Effect on the Microphase Separations in Supramolecular Comb−Coil Complexes of Polystyrene-block-poly(2-vinylpyridine) with Dodecylbenzenesulfonic Acid: (AB)nAn Block−Arm Star Copolymer

TL;DR: In this article, the microphase separation in a supramolecular comb−coil block copolymer formed by the stoichiometric complexation of an amphiphilic surfactant, dodecylbenzenesulfonic acid (DBSA), with the poly(2-vinylpyridine) (P2VP) blocks in a nonlinear heteroarm (PS)5(P2V)5 star copolymers has been investigated.
Journal ArticleDOI

Conjugated Fluorene Based Rod–Coil Block Copolymers and Their PCBM Composites for Resistive Memory Switching Devices

TL;DR: The tunable memory characteristics through the block length ratio of block copolymers or PCBM composition provided the solution-processable charge storage nanomaterials for programmable high density memory device with a reducing bit cell size.