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Wen-Chang Chen
Researcher at National Taiwan University
Publications - 643
Citations - 20822
Wen-Chang Chen is an academic researcher from National Taiwan University. The author has contributed to research in topics: Polymer & Copolymer. The author has an hindex of 70, co-authored 596 publications receiving 18258 citations. Previous affiliations of Wen-Chang Chen include Tokyo Institute of Technology & National Tsing Hua University.
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New random copolymers with pendant carbazole donor and 1,3,4-oxadiazole acceptor for high performance memory device applications
TL;DR: In this paper, a non-conjugated random copolymers containing pendent electron-donating 9-4-vinylphenyl carbazole (VPK) and electron-accepting 2-phenyl-5-(4-vanyl-1,3,4-oxadiazole (OXD) units were successfully synthesized by nitroxide-mediated free radical polymerization (NMRP).
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Nonvolatile memory based on pentacene organic field-effect transistors with polystyrenepara-substituted oligofluorene pendent moieties as polymer electrets
TL;DR: In this article, the nonvolatile memory characteristics of pentacene-based organic field effect transistors (OFET) using polystyrenepara-substituted with π-conjugated oligofluorenes (P(St-Fl)n (n = 1-3)) as chargeable polymer electrets were investigated.
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Effect of Spacer Length of Siloxane‐Terminated Side Chains on Charge Transport in Isoindigo‐Based Polymer Semiconductor Thin Films
Jianguo Mei,Jianguo Mei,Hung-Chin Wu,Hung-Chin Wu,Ying Diao,Ying Diao,Anthony L. Appleton,Hong Wang,Hong Wang,Yan Zhou,Wen-Ya Lee,Tadanori Kurosawa,Wen-Chang Chen,Zhenan Bao +13 more
TL;DR: In this paper, a series of isoindigo-based conjugated polymers (PII2F-CmSi, m = 3-11) with alkyl siloxane-terminated side chains are prepared, in which the branching point is systematically removed from the backbone by one carbon atom.
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Supramolecular block copolymers: graphene oxide composites for memory device applications
TL;DR: Bistable resistive switching characteristics obtained using a supramolecular hybrid route to hydrogen-bonded block copolymers and graphene oxide as charge storage materials are reported for write-once-read-many-times (WORM) memory devices.
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Highly‐Aligned Electrospun Luminescent Nanofibers Prepared from Polyfluorene/PMMA Blends: Fabrication, Morphology, Photophysical Properties and Sensory Applications
TL;DR: In this article, a binary blend of PFO/PMMA and PF + /PMMA was used to obtain high-aligned luminescent electrospun nanofibers.