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Wen-Chang Chen
Researcher at National Taiwan University
Publications - 643
Citations - 20822
Wen-Chang Chen is an academic researcher from National Taiwan University. The author has contributed to research in topics: Polymer & Copolymer. The author has an hindex of 70, co-authored 596 publications receiving 18258 citations. Previous affiliations of Wen-Chang Chen include Tokyo Institute of Technology & National Tsing Hua University.
Papers
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Journal ArticleDOI
Conjugated polysquaraines synthesized by polycondensation: Physical, optical, and charge transport properties
Qi Xiao,Sheng-Yuan Hong,Mengmeng Han,Jin He,Chu-Chen Chueh,Wen-Chang Chen,Zhen Li,Zhen Li,Zhong'an Li +8 more
TL;DR: In this article, a main-chain p-π conjugated polysquaraines were developed through a facile metal-free polycondensation from anilinosquarain.
Patent
Photoluminescence fiber and material thereof
TL;DR: In this paper, a material of photoluminescence fiber is suitable to form by utilizing an electrospinning process, which includes a blend of conjugated photo- luminescence polymer and transparent non-conjugated polymer.
Journal ArticleDOI
Stretchable diketopyrrolopyrrole-based conjugated polymers with asymmetric sidechain designs for field-effect transistor applications
TL;DR: In this paper , three asymmetric sidechain combinations based on a linear alkyl chain, a carbosilane chain and a siloxane-terminated chain were designed to synthesize three conjugated polymers.
Journal ArticleDOI
Studies of ionizing radiation effects on STAR silicon drift detectors
R. Bellwied,R. Beuttenmuller,Wen-Chang Chen,D. DiMassimo,H. Dyke,A. French,J.R. Hall,Gerald W Hoffmann,T.J. Humanic,Ivan Kotov,H.W. Kraner,Z. Li,C.J. Liaw,J. Lopez,David Lynn,V. L. Rykov,S.U. Pandey,Claude Andre Pruneau,J. Schambach,J. Sedlmeir,E. Sugarbaker,J. Takahashi,W.K. Wilson +22 more
TL;DR: A 63/spl times/63 mm rectangular silicon drift detector was irradiated using a /sup 60/Co source and its performance was studied in this paper, where the total accumulated dosage was 23.5 kRad.
Journal ArticleDOI
Edge sensitivity of "edgeless" silicon pad detectors measured in a high energy beam
B. Perea Solano,M.C. Abreu,V. Avati,Tommaso Boccali,V. Boccone,Marco Bozzo,R. Capra,L. Casagrande,Wen-Chang Chen,K. Eggert,Erik H.M. Heijne,S. Klauke,Z. Li,T. Maki,Laurent Mirabito,A. Morelli,T. O. Niinikoski,F. Oljemark,V.G. Palmieri,P. Rato Mendes,S.G. Rodrigues,P. Siegrist,Lucia Silvestris,P. Sousa,S. Tapprogge,B. Trocmé +25 more
TL;DR: In this article, the edge sensitivity of planar silicon pad diode detectors was measured in a high-energy beam of the X5 high energy pion beam at CERN and the gap width between the edgeless sensors, determined using the tracks measured by the reference telescope, was compared with the results of precision metrology.