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Xiang Ji
Researcher at Massachusetts Institute of Technology
Publications - 30
Citations - 1283
Xiang Ji is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Graphene & Raman spectroscopy. The author has an hindex of 11, co-authored 30 publications receiving 629 citations. Previous affiliations of Xiang Ji include Tsinghua University.
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Journal ArticleDOI
Ultralow contact resistance between semimetal and monolayer semiconductors.
Pin-Chun Shen,Cong Su,Yuxuan Lin,Yuxuan Lin,Ang-Sheng Chou,Ang-Sheng Chou,Chao-Ching Cheng,Jihoon Park,Ming-Hui Chiu,Ming-Hui Chiu,Ang-Yu Lu,Hao-Ling Tang,Hao-Ling Tang,Mohammad Mahdi Tavakoli,Gregory Pitner,Xiang Ji,Zhengyang Cai,Nannan Mao,Jiangtao Wang,Vincent Tung,Ju Li,Jeffrey Bokor,Jeffrey Bokor,Alex Zettl,Alex Zettl,Chih-I Wu,Tomas Palacios,Lain-Jong Li,Jing Kong +28 more
TL;DR: In this paper, the metal-induced gap states (MIGS) were suppressed and degenerate states in the metal dichalcogenides (TMDs) spontaneously formed in contact with bismuth.
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Two-dimensional MoS2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting.
Xu Zhang,Jesus Grajal,J. L. Vazquez-Roy,Ujwal Radhakrishna,Xiaoxue Wang,Winston Chern,Lin Zhou,Yuxuan Lin,Pin-Chun Shen,Xiang Ji,Xi Ling,Ahmad Zubair,Yuhao Zhang,Han Wang,Madan Dubey,Jing Kong,Mildred S. Dresselhaus,Tomas Palacios +17 more
TL;DR: This work fabricates a fully flexible and integrated rectenna that achieves wireless energy harvesting of electromagnetic radiation in the Wi-Fi band with zero external bias (battery-free) and provides a universal energy-harvesting building block that can be integrated with various flexible electronic systems.
Journal ArticleDOI
Tuning Electronic Structure of Single Layer MoS2 through Defect and Interface Engineering
Yan Chen,Yan Chen,Shengxi Huang,Xiang Ji,Kiran Kumar Adepalli,Kedi Yin,Xi Ling,Xinwei Wang,Jianmin Xue,Mildred S. Dresselhaus,Jing Kong,Bilge Yildiz +11 more
TL;DR: It is found that the substrates can tune the electronic energy levels in MoS2 due to charge transfer at the interface and the reduction state of CeO2 as an oxide substrate affects the interface charge transfer withMoS2.
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High Luminescence Efficiency in MoS2 Grown by Chemical Vapor Deposition
Matin Amani,Matin Amani,Robert A. Burke,Xiang Ji,Peida Zhao,Peida Zhao,Der Hsien Lien,Der Hsien Lien,Peyman Taheri,Geun Ho Ahn,Geun Ho Ahn,Daisuke Kirya,Daisuke Kirya,Joel W. Ager,Eli Yablonovitch,Eli Yablonovitch,Jing Kong,Madan Dubey,Ali Javey,Ali Javey +19 more
TL;DR: It is shown that the PL QY of CVD-grown monolayers can be improved from ∼0.1% in the as-grown case to ∼30% after treatment, with enhancement factors ranging from 100 to 1500× depending on the initial monolayer quality.
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A theoretical model for metal–graphene contact resistance using a DFT–NEGF method
TL;DR: A theoretical model is reported to estimate the contact resistance between graphene and metal electrodes using density-functional theory and non-equilibrium Green's function methods and generates values which are in good agreement with the experimental results.