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Ahmad Zubair
Researcher at Massachusetts Institute of Technology
Publications - 23
Citations - 656
Ahmad Zubair is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Transistor & Threshold voltage. The author has an hindex of 6, co-authored 23 publications receiving 350 citations. Previous affiliations of Ahmad Zubair include Bangladesh University of Engineering and Technology.
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Journal ArticleDOI
Two-dimensional MoS2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting.
Xu Zhang,Jesus Grajal,J. L. Vazquez-Roy,Ujwal Radhakrishna,Xiaoxue Wang,Winston Chern,Lin Zhou,Yuxuan Lin,Pin-Chun Shen,Xiang Ji,Xi Ling,Ahmad Zubair,Yuhao Zhang,Han Wang,Madan Dubey,Jing Kong,Mildred S. Dresselhaus,Tomas Palacios +17 more
TL;DR: This work fabricates a fully flexible and integrated rectenna that achieves wireless energy harvesting of electromagnetic radiation in the Wi-Fi band with zero external bias (battery-free) and provides a universal energy-harvesting building block that can be integrated with various flexible electronic systems.
Journal ArticleDOI
Paraffin-enabled graphene transfer
Wei Sun Leong,Haozhe Wang,Jingjie Yeo,Jingjie Yeo,Jingjie Yeo,Francisco J. Martin-Martinez,Ahmad Zubair,Pin-Chun Shen,Yunwei Mao,Tomas Palacios,Markus J. Buehler,Jin-Yong Hong,Jing Kong +12 more
TL;DR: A transfer approach using paraffin as a support layer is developed, whose thermal properties, low chemical reactivity and non-covalent affinity to graphene enable transfer of wrinkle-reduced and clean large-area graphene retaining high mobility.
Journal ArticleDOI
Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of Merit
Yuhao Zhang,Min Sun,J. Perozek,Zhihong Liu,Ahmad Zubair,Daniel Piedra,Nadim Chowdhury,Xiang Gao,Kenneth L. Shepard,Tomas Palacios +9 more
TL;DR: In this paper, the first experimental study on capacitances, charges, and power-switching figure of merits (FOM) for a large-area vertical GaN power transistor was presented.
Journal ArticleDOI
GaN FinFETs and trigate devices for power and RF applications: review and perspective
TL;DR: In this article, the authors present a global overview of the reported GaN FinFET and trigate device technologies for RF and power applications, as well as provide in-depth analyses correlating device design parameters to device performance space.
Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit
Yuhao Zhang,Min Sun,J. Perozek,Zhihong Liu,Ahmad Zubair,Daniel Piedra,Nadim Chowdhury,Xiang Gao,Kenneth L. Shepard,Tomas Palacios +9 more
TL;DR: In this article, the first experimental study on capacitances, charges, and power-switching figure of merits (FOM) for a large-area vertical GaN power transistor was presented.