Proceedings ArticleDOI
Modeling of GeOI and validation with Ge-CMOS inverter circuit using BSIM-IMG industry standard model
Harshit Agarwal,Pragya Kushwaha,Yogesh Singh Chauhan,Sourabh Khandelwal,Juan P. Duarte,Yen-Kai Lin,Huan-Lin Chang,Chenming Hu,Heng Wu,Peide D. Ye +9 more
- pp 444-447
TLDR
In this article, a compact model for independent double gate MOSFET (BSIM-IMG) with updated mobility model is presented for Germanium On Insulator (GeOI) devices.Abstract:
Recently, experimental Germanium CMOS devices and circuit are reported for advanced technology nodes for the first time. In this paper, we have modeled Germanium On Insulator (GeOI) device with industry standard compact model for independent double gate MOSFET (BSIM-IMG) with updated mobility model. It is shown that BSIM-IMG with updated mobility model accurately captures static characteristics for both n-channel and p-channel devices, and reproduces experimental CMOS inverter characteristics. This is the first time, when a compact model is validated on experimental CMOS circuit operation of GeOI.read more
Citations
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Journal ArticleDOI
Compact Modeling of Drain Current Thermal Noise in FDSOI MOSFETs Including Back-Bias Effect
TL;DR: In this paper, an analytical charge-based model for thermal noise power spectral density in fully depleted silicon on insulator (FDSOI) MOSFETs is presented.
Journal ArticleDOI
Modeling of Back-Gate Effects on Gate-Induced Drain Leakage and Gate Currents in UTB SOI MOSFETs
Yen-Kai Lin,Pragya Kushwaha,Harshit Agarwal,Huan-Lin Chang,Juan Pablo Duarte,Angada B. Sachid,Sourabh Khandelwal,Sayeef Salahuddin,Chenming Hu +8 more
TL;DR: In this paper, the back-gate bias-dependent gate-induced drain leakage (GIDL) and gate current models of ultrathin body (UTB) silicon-on-insulator (SOI) MOSFETs are proposed.
Journal ArticleDOI
Transistor Compact Model Based on Multigradient Neural Network and Its Application in SPICE Circuit Simulations for Gate-All-Around Si Cold Source FETs
Qihang Yang,Guodong Qi,Weizhuo Gan,Zhenhua Wu,Huaxiang Yin,Tao Chen,Guangxi Hu,Jing Wan,Shaofeng Yu,Ye Lu +9 more
TL;DR: A TCM based on multigradient neural network (MNN) using computational graph in the PyTorch framework is developed, which enables more precise circuit simulation for analog and RF circuits, and provides a rapid solution for early stage design technology cooptimization (DTCO).
Journal ArticleDOI
A New Compact MOSFET Model Based on Artificial Neural Network With Unique Data Preprocessing and Sampling Techniques
TL;DR: In this paper , a new compact MOSFET model based on artificial neural network (ANN) was developed for analog circuit simulation, and the ANN model has a better fitting capability than BSIM4 model which is the state-of-the-art model.
Compact Modeling of Advanced CMOS and Emerging Devices for Circuit Simulation
TL;DR: Two paradigms of steep subthreshold slope transistors - TFETs and NCFETs as the promising candidates for future Internet of Things (IoT) and logic/analog applications are also presented in this thesis.
References
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Journal ArticleDOI
Academic and industry research progress in germanium nanodevices
TL;DR: Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.
Journal ArticleDOI
High-k/Ge MOSFETs for future nanoelectronics
TL;DR: In this article, the opportunities and challenges of high-k/Ge MOSFETs are discussed on the basis of the material properties of Ge oxide to provide insights for future progress.
Journal ArticleDOI
Germanium Based Field-Effect Transistors: Challenges and Opportunities
Patrick S. Goley,Mantu K. Hudait +1 more
TL;DR: This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack.
Journal ArticleDOI
BSIM6: Analog and RF Compact Model for Bulk MOSFET
Yogesh Singh Chauhan,Sriramkumar Venugopalan,Maria-Anna Chalkiadaki,M. A. Karim,Harshit Agarwal,Sourabh Khandelwal,Navid Paydavosi,Juan Pablo Duarte,Christian Enz,Ali M. Niknejad,Chenming Hu +10 more
TL;DR: The BSIM6 model has been extensively validated with industry data from 40-nm technology node and shows excellent source-drain symmetry during both dc and small signal analysis, thus giving excellent results during analog and RF circuit simulations.
Journal ArticleDOI
BSIM-IMG: A Compact Model for Ultrathin-Body SOI MOSFETs With Back-Gate Control
Sourabh Khandelwal,Yogesh Singh Chauhan,Darsen D. Lu,Sriramkumar Venugopalan,M. A. Karim,Angada B. Sachid,Bich-Yen Nguyen,O. Rozeau,O. Faynot,Ali M. Niknejad,C. Hu +10 more
TL;DR: In this article, the authors present an accurate and computationally efficient model for circuit simulation of ultrathin-body silicon-on-insulator MOSFETs with strong back-gate control.
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