Yuhua Cheng

TL;DR: A new physical and continuous BSIM (Berkeley Short-Channel IGFET Model) I-V model in BSIM3v3 is presented for circuit simulation, which allows users to accurately describe the MOSFET characteristics over a wide range of channel lengths and widths for various technologies, and is attractive for statistical modeling.

TL;DR: In this paper, the authors present the temperature modelling in BSIM3v3 (Berkeley Short-Channel IGFET Model version 3), and comparison with measured data for both n- and p-channel devices with a channel length down to a quarter of a micrometre from room temperature up to C.

TL;DR: A simple and accurate MOSFET channel charge model for device modeling in circuit simulation that agrees with the experimental data well at various process and bias conditions from subthreshold and strong inversion, including the moderate inversion region of growing importance for low-voltage/power circuits.

TL;DR: In this paper, a model of small size MOSFETs and experimental verification of the model using devices with varying pocket implant processes is presented, which can well describe reverse short channel and narrow width effects and match the measured characteristics of threshold voltage and saturation current over a wide range of channel lengths and widths down to 0.12 μm regime.

TL;DR: An analytical inversion charge model, ICM, based on a surface potential solution and consideration of poly-gate depletion as well as the correction of quantum mechanical effects is presented in this paper.