Zhiping Yu

TL;DR: In this paper, the potential impact of high/spl kappa/ gate dielectrics on device short-channel performance is studied over a wide range of dielectric permittivities using a two-dimensional (2D) simulator implemented with quantum mechanical models.

TL;DR: In this article, the authors proposed a noise optimization method for low-noise amplifier (LNA) designs based on measured fournoise parameters and two-port noise theory, which can achieve near NF/sub min/ by choosing an appropriate device geometry along with an optimal bias condition.

TL;DR: In this paper, the influence of gate direct tunneling current on gate oxide MOS (1.1 nm/spl les/t/sub ox/spl −1.5 nm, L/sub g/=50-70 nm) circuits has been studied based on detailed simulations.

TL;DR: In this article, a first-principles calculation of contacts between graphene and 12 different metals was performed, and it was shown that there exist two types of contacts depending on the strength of interaction between d-orbitals in metals and pz-orbital in graphene.

TL;DR: In this article, the density-gradient description of quantum transport is applied to the analysis of tunneling phenomena in ultrathin oxide MOS capacitors and two new refinements to density gradient theory are introduced, relating to the treatment of Shockley-Read-Hall recombination and the modification of the tunneling boundary conditions to account for the semiconductor bandgap.