scispace - formally typeset
Search or ask a question
Institution

Institut supérieur d'électronique et du numérique

EducationLille, France
About: Institut supérieur d'électronique et du numérique is a education organization based out in Lille, France. It is known for research contribution in the topics: CMOS & Filter (video). The organization has 192 authors who have published 223 publications receiving 2845 citations.


Papers
More filters
Journal ArticleDOI
TL;DR: A coordinated control scheme based on a leader-follower approach is developed to achieve formation maneuvers and first and second order sliding-mode controllers are proposed for asymptotically stabilizing the vehicles to a time-varying desired formation.
Abstract: This paper considers the control of a group of autonomous mobile robots. A coordinated control scheme based on a leader-follower approach is developed to achieve formation maneuvers. First and second order sliding-mode controllers are proposed for asymptotically stabilizing the vehicles to a time-varying desired formation. The latter controller, based on the relative motion states, eliminates the need for measurement or estimation of the leader velocity. It enables formation stabilization using a vision system carried by the followers and ensures the collision avoidance from the initial time instance. Experimental investigation has been conducted using a test bench made of three nonholonomic mobile robots in order to demonstrate the effectiveness of the proposed strategy.

319 citations

Proceedings ArticleDOI
03 Apr 2012
TL;DR: A low-power 1kpixel terahertz camera chip fully compliant with an industrial 65nm ft/fmax=160GHz/200GHz CMOS process technology, designed to accommodate the optics for wide bandwidth in stand-off detection with a 40dBi Si-lens.
Abstract: Future imaging applications in the submillimeter-Wave range (300GHz to 3THz) require RF systems that can achieve high sensitivity and portability at low power consumption levels. In particular, CMOS process technologies are attractive due to their low price tag for industrial, surveillance, scientific, and medical applications. Recently, CMOS-based detectors have shown good sensitivity up to 1THz with NEPs on the order of 66pW/√(Hz) at 1THz [1]. However, CMOS terahertz imagers developed thus far have only operated single detectors based on lock-in measurement techniques to acquire raster-scanned images with frame rates on the order of minutes [2]. To address these impediments, we present a low-power 1kpixel terahertz camera chip fully compliant with an industrial 65nm f t /f max =160GHz/200GHz CMOS process technology. The active-pixel circuit topology is designed to accommodate the optics for wide bandwidth (0.6 to 1THz) in stand-off detection with a 40dBi Si-lens. It includes row/col select and integrate-and-dump circuitry capable of capturing terahertz images with video frame rates up to 25fps at a power consumption of 2.5μW/pixel.

120 citations

Journal ArticleDOI
TL;DR: It is found that target estimation obtained by imaging with two orthogonal polarization states always improves detection performances when correlation is used as detection criterion.
Abstract: Underwater target detection is investigated by combining active polarization imaging and optical correlation-based approaches. Experiments were conducted in a glass tank filled with tap water with diluted milk or seawater and containing targets of arbitrary polarimetric responses. We found that target estimation obtained by imaging with two orthogonal polarization states always improves detection performances when correlation is used as detection criterion. This experimentally study illustrates the potential of polarization imaging for underwater target detection and opens interesting perspectives for the development of underwater imaging systems.

106 citations

Journal ArticleDOI
TL;DR: In this paper, the authors provide the scientific community with both general and in depth information on the structure-property relationships related to the photocurrent efficiencies comprising detailed I/V characteristics.
Abstract: The last decade has witnessed rapid progress in organic photovoltaics boosted by the design and synthesis of novel π-conjugated small donor–acceptor molecules (mainly thiophene-based chromophores) and by the control and optimization of both device processing and fabrication. Although some important progress has been reached, current challenges remain to further improve their efficiency, durability and cost-effectiveness in order to compete with silicon-based solar cells. This review will provide the scientific community with both general and in depth information on the structure–property relationships related to the photocurrent efficiencies comprising detailed I/V characteristics. It will highlight guidelines for designing new efficient and emerging alternatives to conjugated polymers on the basis of thiophenic chromophores representing, to date, the most widely used class of organic materials for such a purpose as well as important information on device processing or fabrication factors that could influence their performances.

102 citations

Journal ArticleDOI
TL;DR: An all-digital RF signal generator using DeltaSigma modulation and targeted at transmitters for mobile communication terminals has been implemented in 90 nm CMOS, providing a 50 MHz bandwidth at a 1 GHz center frequency.
Abstract: An all-digital RF signal generator using DeltaSigma modulation and targeted at transmitters for mobile communication terminals has been implemented in 90 nm CMOS. Techniques such as redundant logic and non-exact quantization allow operation at up to 4 GHz sample rate, providing a 50 MHz bandwidth at a 1 GHz center frequency. The peak output power into a 100 Omega diff. load is 3.1 dBm with 53.6 dB SNDR. By adjusting the sample rate, carriers from 50 MHz to 1 GHz can be synthesized. RF signals up to 3 GHz can be synthesized when using the first image band. As an example, UMTS standard can be addressed by using a 2.6 GHz clock frequency. The measured ACPR is then 44 dB for a 5 MHz WCDMA channel at 1.95 GHz with output power of -16 dBm and 3.4% EVM. At 4 GHz clock frequency the total power consumption is 120 mW (49 mW for DeltaSigma modulator core) on a 1 V supply voltage, total die area is 3.2 mm2 (0.15 mm2 for the active area).

99 citations


Authors

Showing all 196 results

NameH-indexPapersCitations
Enge Wang7740922287
Sabine Szunerits6045114157
Christophe Delerue5424112185
Alexandre Barras391293800
G. Allan29842051
Andreas Kaiser281893406
M. Lannoo27901819
Anne-Christine Hladky-Hennion261432973
Ian O'Connor241832165
Ayman Alfalou241332490
Dimitri Galayko211611704
Pascal Martin21541291
Emmanuel Delaleau19451147
Michael Baudoin19621355
Emmanuel Duflos18781498
Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20232
20223
20213
20204
201910
201811