LG Electronics

About: LG Electronics is a company organization based out in Englewood Cliffs, New Jersey, United States. It is known for research contribution in the topics: Terminal (electronics) & Signal. The organization has 23803 authors who have published 30670 publications receiving 437499 citations. The organization is also known as: LG Electronics Inc. & LG.

Analysis and Design Guide of Active EMI Filter in a Compact Package for Reduction of Common-Mode Conducted Emissions

Abstract: A common-mode (CM) active filter was designed in a compact package to suppress CM conducted emissions at a switching mode power supply (SMPS). Based on the analytical expressions considering both stability and performance, the design and optimization rules for the proposed active filter have been presented. After verifying its performance by measurements using vector network analysis, the proposed filter was installed in a 200-W SMPS board with 64 and 110 kHz switching frequencies, demonstrating its usefulness by experiments. The performance degradation due to the magnetic saturation and the AEF grounding impedance was also analyzed and investigated.

Method and apparatus for receiving system information in wireless communication system

Abstract: A method and apparatus for receiving system information in a wireless communication system is provided. A user equipment (UE) receives a system information modification from an eNodeB (eNB) on a UE-dedicated channel via a radio resource control (RRC) connection reconfiguration message, and receives at least one system information block from the enB according to system information modification.

Portable computer of multifunction type

Abstract: Embodiments of the present invention relate to an apparatus (e.g. a portable computer) including a peripheral device (e.g. a hard disk) and a bracket. The bracket may be configured to rigidly attach the peripheral device to the apparatus. Further, the bracket may be configured to guide the peripheral device into electrical contact with the apparatus.

Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface

Abstract: This study examined the effect of the thickness of interfacial indium-tin oxide (ITO) on the performance and bias reliability of zinc-tin oxide (ZTO) thin film transistors (TFTs). The 3.5-nm-thick ITO-inserted ZTO TFTs exhibited superior mobility (43.2 cm2/V s) to that of the ZTO only TFTs (31.6 cm2/V s). Furthermore, the threshold voltage shifts for the ZTO/ITO bi-layer device decreased from 1.43 and −0.88 V (ZTO only device) to 0.46 V and −0.41 V under positive and negative bias stress, respectively. This improvement can be attributed to a decrease in the interfacial trap density for the ITO-inserted ZTO device.

Method of transmitting/receiving lte system information in a wireless communication system

Abstract: In a wireless mobile communications system, the system information is grouped or classified in different types according to the characteristics of the system information, and the system information is transmitted to channels with specific functions that allow the optimization of the resource usage and the reception by the User Equipment (UE).