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21.3: A 65-inch Amorphous Oxide Thin Film Transistors Active-Matrix Organic Light-Emitting Diode Television Using Side by Side and Fine Metal Mask Technology

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TLDR
In this paper, a 65 inches amorphous oxide thin-film transistors active-matrix organic light-emitting diode television panel was reported, whose long range threshold voltage uniformity is 0.34V.
Abstract
We reported a 65 inches amorphous oxide thin film transistors active-matrix organic light-emitting diode television panel. The thin film transistor shows an excellent characteristic. The long range threshold voltage uniformity is 0.34V. The side by side organic light-emitting diode device is realized by fine metal mask. The dam and fill encapsulation method shows a simple process procedure and high stability.

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Citations
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Journal ArticleDOI

Recent advances in organic light-emitting diodes: toward smart lighting and displays

TL;DR: In this paper, a review of light emission mechanisms of electroluminescent materials is presented, and a brief perspective on future research is also proposed for pursuing the commercialization of OLEDs.
Journal ArticleDOI

Study on the Photoresponse of Amorphous In–Ga–Zn–O and Zinc Oxynitride Semiconductor Devices by the Extraction of Sub-Gap-State Distribution and Device Simulation

TL;DR: The concept of activation energy window (AEW) is introduced to explain the occurrence of PPC effects by photoinduced electron doping, which is likely to be associated with the formation of peroxides in the semiconductor.
Journal ArticleDOI

Shoot-through current reduction scheme for low power LTPS TFT programmable shift register

TL;DR: A programmable pulse width shift register where an output pulse width is adjusted only by changing a start pulse width without any additional signals and reconfiguration for the pre-charging scheme of high resolution and high frame rate active-matrix flat-panel displays is proposed.

High-dynamic-range displays : contributions to signal processing and backlight control

M. Hammer
Abstract: Compared to a conventional RGB LCD, an RGBW LCD is known to result in 50% higher light transmission. However, the reduced aperture for the RGB subpixels lead to reduced luminance for saturated pixels. Consequently, colorful images may appear dull due to a lack of sufficient luminance. In this work it is proposed to address the luminance shortage for bright saturated pixels by boosting a spatially modulated backlight. Whereas best-in-class methods for deriving backlight drive levels either results in high contrast or temporal stability, we propose a reformulation which provide superior contrast and temporal stability. By employing local backlight boosting, the 99.5%-percentile of ∆E94 is reduced from 12.3 JND to 4.3 JND on average. Power consumption is reduced by 18% compared to an RGB LCD with local backlight dimming. Additionally, we propose to increase luminance of desaturated pixels in regions of backlight boosting, which results in an average luminance increase of 16% for pixels which are boosted. Reproduced from M Hammer and KJG Hinnen (2014). „Local Luminance Boosting of an RGBW LCD”. in: IEEE/OSA J. Display Technol. 10.1, pp. 33–42.
Journal ArticleDOI

58.2: High-Performance Large-Size OLED Tv with Ultra Hd Resolution

TL;DR: By combining stable array processes and cutting-edge OLED processes, the authors successfully fabricated a high-performance 65-inch ultra HD TV with excellent visual quality, which is shown in Figure 1.
References
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Journal ArticleDOI

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
Journal ArticleDOI

42.2: World's Largest (15‐inch) XGA AMLCD Panel Using IGZO Oxide TFT

TL;DR: In this paper, the main factors affecting threshold voltage (Vth) of the IGZO thin film transistors (TFTs) are investigated and evaluated with the field effective mobility of 4.2±0.4 cm2/V-s, Vth of −1.3±1.4V and sub-threshold swing (SS) of 0.96± 0.10 V/dec.
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High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

TL;DR: In this paper, a-IGZO channels were fabricated using amorphous indium gallium zinc oxide channels by rf-magnetron sputtering at room temperature.
Journal ArticleDOI

Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application

TL;DR: In this article, a chemical design concept of ionic amorphous oxide semiconductor (IAOS) and its unique electron transport properties, and electronic structure, by comparing them with those of conventional ammorphous semiconductors is addressed.
Journal ArticleDOI

Polysilicon TFT technology for active matrix OLED displays

TL;DR: In this paper, the integration of active matrix polysilicon TFT technology with organic light emitting diode (OLED) displays has been investigated with the goal of producing displays of uniform brightness.
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What invention came after the transistor?

The thin film transistor shows an excellent characteristic.