Journal ArticleDOI
320×256 Extended Wavelength In x Ga 1-x As/InP Focal Plane Arrays: Dislocation Defect, Dark Signal and Noise
Yingjie Ma,Xue Li,Xiumei Shao,Deng Shuangyan,Cheng Jifeng,Yi Gu,Yage Liu,Yu Chen,Zhu Xianliang,Tao Li,Yonggang Zhang,Haimei Gong,Jiaxiong Fang +12 more
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TLDR
In this paper, a 320×256 short-wave infrared focal plane arrays (SWIR FPAs) with pixel pitches of 24 and 30 μm, extended cutoff wavelengths of 2.2 and 2.5 µm, low dark current densities of 5.2 nA/cm2, and high peak detectivities of 6×1011 and 6 ×1012 cmHz1/2W−1 are attained at 180 K, respectively.Abstract:
In0.75Ga0.25As and In0.83Ga0.17As 320×256 short-wave infrared focal plane arrays (SWIR FPAs) with pixel pitches of 24 and 30 μm, extended cutoff wavelengths of 2.2 and 2.5 μm, low dark current densities of 5.2 and 21 nA/cm2, and high peak detectivities of 6×1011 and 6×1012 cmHz1/2W−1 are attained at 180 K, respectively. Lower 1/f noises and smaller knee frequencies are observed for the 2.2 μm FPA, indicates the dislocation defect-related trap states act as the major contributor for the 1/f noise. The non-uniformities of the dark signal and the dark noise are roughly the same for both FPAs at a short integration time of 1 ms (29% and 25% at 180 K, respectively) whereas are much smaller for the 2.2 μm FPA at longer integration times. Moreover, the dark current shot noise dominant integration time ranges are determined to be >20 and >2 ms for the 2.2 and 2.5 μm FPAs, respectively. Enhanced heat signature recording capability is also observed for wider SWIR spectral range while more effective suppression routes of dislocation defect must be incorporated for further improved sensitivity.read more
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Journal ArticleDOI
Design Principles for High QE HgCdTe Infrared Photodetectors for eSWIR Applications
Nima Dehdashti Akhavan,Gilberto A. Umana-Membreno,Renjie Gu,Jarek Antoszewski,Lorenzo Faraone +4 more
TL;DR: In this paper , the limiting mechanisms and design criteria of HgCdTe photodetectors for extended shortwave infrared applications with ultra-high quantum efficiency (QE) in both n -on-p and p-on-n technologies were studied.
Journal ArticleDOI
InP-Based Broadband Photodetectors With InGaAs/GaAsSb Type-II Superlattice
Jingyi Wang,Zhi Xie,Liqi Zhu,Xinbo Zou,Xuyi Zhao,Wenfu Yu,Ruotao Liu,Antian Du,Qian Gong,Bai Chen +9 more
TL;DR: In this paper , a broadband photodetector with an optical spectrum response ranging from 250 nm to 2400 nm is demonstrated, and a recessed window on the surface of the top P layer was fabricated to enhance the responsivity of ultraviolet (UV) and visible band.
Journal ArticleDOI
Deriving the absorption coefficients of lattice mismatched InGaAs using genetic algorithm
Hui Jing Lee,Mansur Mohammed Ali Gamel,Pin Jern Ker,Md. Zaini Jamaludin,Yew Hoong Wong,Keem Siah Yap,Jon R. Willmott,Matthew J. Hobbs,John P. R. David,Chee Hing Tan +9 more
TL;DR: In this paper , the absorption coefficient of lattice-mismatched In0.83Ga0.17As was determined through photocurrent measurement which enables the absorption tail information to be extracted.
Journal ArticleDOI
2.45-μm 1280 × 1024 InGaAs Focal Plane Array With 15-μm Pitch for Extended SWIR Imaging
TL;DR: In this article , a mega-pixel focal plane array (FPA) with a format of 1280 × 1280 pixels and a spectral response range of 1150-2450 nm has been demonstrated.
Journal ArticleDOI
Effects of in-situ thermal annealing on metamorphic InGaAs photodetector materials grown by molecular beam epitaxy
Bowen Liu,Y. Gu,Weiguo CaoLiping SongQingchun Huang,S.S Deng,Songyang Wang,Yingjie Ma,Hongzhen Wang,Hua Huang,Qiang Gong,Tao Li,Xiumei Shao,Xue Li,Haimei Gong +12 more
TL;DR: In this article , the optoelectronic, morphological and structural performances of metamorphic In0.75Ga0.25As photodetector materials treated by in-situ thermal annealing were investigated.
References
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1/f noise sources
TL;DR: In this paper, a survey of 1/f noise in homogeneous semiconductor samples is presented, where a distinction is made between mobility noise and number noise, and it is shown that there always is mobility noise with an /spl alpha/ value with a magnitude in the order of 10/sup -4/.
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nBn detector, an infrared detector with reduced dark current and higher operating temperature
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TL;DR: The nBn detector as discussed by the authors eliminates the Shockley-Read-Hall generation currents and reduces the amount of dark current and noise in the detector, which enables it to operate at background-limited infrared photodetection conditions at significantly higher temperatures than conventional midwave infrared detectors.
Journal ArticleDOI
1/f noise
TL;DR: A survey is given of the recent literature on 1/ f noise and proposed models for mathematical models, empirical relations and physical models are discussed.
Journal ArticleDOI
Dark current analysis and characterization of In/sub x/Ga/sub 1-x/As/InAs/sub y/P/sub 1-y/ graded photodiodes with x>0.53 for response to longer wavelengths (>1.7 mu m)
TL;DR: In this article, the dark current properties of In/sub x/Ga/sub 1-x/As photodiodes, where x is varied from 0.53 to 0.82 for extending the long wavelength cutoff from 1.7 to 2.6 mu m, are described.
Journal ArticleDOI
HgCdTe mid-wavelength IR photovoltaic detectors fabricated using plasma induced junction technology
TL;DR: In this article, the authors presented preliminary characterization results for mid-wave infrared (MWIR) mercury cadmium telluride n-on-p photodiodes fabricated using a plasma induced type conversion junction formation technology.