Journal ArticleDOI
640 $\,\times\,$ 512 Pixels Long-Wavelength Infrared (LWIR) Quantum-Dot Infrared Photodetector (QDIP) Imaging Focal Plane Array
Sarath D. Gunapala,Sumith V. Bandara,Cory J. Hill,D. Z. Ting,John K. Liu,B. Rafol,E.R. Blazejewski,Jason M. Mumolo,Sam A. Keo,Sanjay Krishna,Yia-Chung Chang,C. A. Shott +11 more
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TLDR
In this article, self-assembled InAs-InGaAs-GaAs quantum dots are exploited for the development of large-format long-wavelength infrared focal plane arrays (FPAs).Abstract:
Epitaxially grown self-assembled InAs-InGaAs-GaAs quantum dots (QDs) are exploited for the development of large-format long-wavelength infrared focal plane arrays (FPAs). The dot-in-a-well (DWELL) structures were experimentally shown to absorb both 45deg and normal incident light, therefore, a reflection grating structure was used to enhance the quantum efficiency. The devices exhibit peak responsivity out to 8.1 mum, with peak detectivity reaching ~1times1010 Jones at 77 K. The devices were fabricated into the first long-wavelength 640times512 pixel QD infrared photodetector imaging FPA, which has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60-K operating temperatureread more
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Journal ArticleDOI
Third-generation infrared photodetector arrays
TL;DR: In this paper, fundamental and technological issues associated with the development and exploitation of third-generation IR photon detectors are discussed, and the most recently developed focal plane arrays based on type-II strained-layer superlattices and quantum dot IR photodetectors are considered.
Journal ArticleDOI
A Surface Plasmon Enhanced Infrared Photodetector Based on InAs Quantum Dots
Chun Chieh Chang,Y.D. Sharma,Yong-Sung Kim,J. Bur,R. V. Shenoi,Sanjay Krishna,Danhong Huang,Shawn-Yu Lin +7 more
TL;DR: The study indicates two key mechanisms for the performance improvement, an optimized 2DHA design that permits an efficient coupling of light from the far-field to a localized plasmonic mode and the close spatial matching of the QD layers to the wave function extent of the plasMonic mode.
Journal ArticleDOI
Quantum-dot infrared photodetectors: Status and outlook
Piotr Martyniuk,Antoni Rogalski +1 more
TL;DR: In this paper, the authors reviewed the present status and possible future developments of quantum-dot infrared photodetectors (QDIPs) and put emphasis on their potential developments.
Journal ArticleDOI
Progress in Infrared Photodetectors Since 2000
TL;DR: This paper reviews the progress made in all of the quantum-based IR systems over the last decade plus, compares the relative merits of the systems as they stand now, and discusses where some of the leading research groups in these fields are going to take these technologies in the years to come.
Journal ArticleDOI
A monolithically integrated plasmonic infrared quantum dot camera.
Sang Jun Lee,Zahyun Ku,Zahyun Ku,Ajit V. Barve,John Montoya,Woo-Yong Jang,Steven R. J. Brueck,Mani Sundaram,Axel Reisinger,Sanjay Krishna,Sam Kyu Noh +10 more
TL;DR: This first demonstration of a monolithically integrated plasmonic focal plane array (FPA) in the mid-infrared region is shown, using a metal with a two-dimensional hole array on top of an intersubband quantum-dots-in-a-well (DWELL) heterostructure FPA coupled to a read-out integrated circuit.
References
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Journal ArticleDOI
The theory of quantum-dot infrared phototransistors
TL;DR: In this paper, a quantum-dot infrared phototransistor (QDIP) was proposed and considered theoretically, which utilizes intersubband electron transitions from the bound states.
Journal ArticleDOI
Far-infrared photoconductivity in self-organized InAs quantum dots
TL;DR: In this paper, the authors reported far-infrared photoconductivity in self-organized InAs/GaAs quantum dots grown by molecular beam epitaxy using a Fourier transform infrared spectrometer.
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Zur Theorie der orientierten Ausscheidung von Ionenkristallen aufeinander
Iwan N. Stranski,L. Krastanow +1 more
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High detectivity InAs quantum dot infrared photodetectors
TL;DR: In this paper, the authors reported a high detectivity of 3×1011 cm 1/2/W at 78 K for normal-incidence quantum dot infrared photodetectors with ten layers of undoped InAs/InGaAs/GaAs active regions.
Journal ArticleDOI
Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature
TL;DR: In this paper, a tunneling quantum-dot infrared photodetector with two-color characteristics with photoresponse peaks at ∼6μm and 17μm was reported.